Stability of H 2-permselective SiO 2 films formed by chemical vapor deposition

SukWoo Nam, G. R. Gavalas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

39 Citations (Scopus)

Abstract

Thin SiO 2 films were heat treated in different gas mixtures to determine their stability in functioning as high-temperature hydrogen permselective membranes. The films were formed within the walls of porous Vycor tubes by SiH 4 oxidation in an opposing reactants geometry. Film deposition was carried out at 450 °C in the presence and absence of water vapor. Immediately after formation, the films were highly selective to hydrogen permeation having a H 2:N 2 permeability ratio of about 3000:1. The films were subsequently heat treated at 450-700°C in dry N 2, dry O 2, N 2-H 2O, and O 2-H 2 mixtures. The permeation rates of H 2 and N 2 changed depending on the original conditions of film formation as well as on the heat treatment.

Original languageEnglish
Title of host publicationAIChE Symposium Series
PublisherPubl by AIChE
Pages68-74
Number of pages7
Volume85
Edition268
Publication statusPublished - 1989
Externally publishedYes
EventMembrane Reactor Technology - Washington, DC, USA
Duration: 1988 Nov 271988 Dec 2

Other

OtherMembrane Reactor Technology
CityWashington, DC, USA
Period88/11/2788/12/2

Fingerprint

Chemical vapor deposition
Permeation
Hydrogen
Permselective membranes
Steam
Gas mixtures
Water vapor
Heat treatment
Oxidation
Geometry
Temperature
Hot Temperature

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Chemistry(all)

Cite this

Nam, S., & Gavalas, G. R. (1989). Stability of H 2-permselective SiO 2 films formed by chemical vapor deposition In AIChE Symposium Series (268 ed., Vol. 85, pp. 68-74). Publ by AIChE.

Stability of H 2-permselective SiO 2 films formed by chemical vapor deposition . / Nam, SukWoo; Gavalas, G. R.

AIChE Symposium Series. Vol. 85 268. ed. Publ by AIChE, 1989. p. 68-74.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nam, S & Gavalas, GR 1989, Stability of H 2-permselective SiO 2 films formed by chemical vapor deposition in AIChE Symposium Series. 268 edn, vol. 85, Publ by AIChE, pp. 68-74, Membrane Reactor Technology, Washington, DC, USA, 88/11/27.
Nam S, Gavalas GR. Stability of H 2-permselective SiO 2 films formed by chemical vapor deposition In AIChE Symposium Series. 268 ed. Vol. 85. Publ by AIChE. 1989. p. 68-74
Nam, SukWoo ; Gavalas, G. R. / Stability of H 2-permselective SiO 2 films formed by chemical vapor deposition AIChE Symposium Series. Vol. 85 268. ed. Publ by AIChE, 1989. pp. 68-74
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