Stability of H2-permselective SiO2 films formed by chemical vapor deposition

S. W. Nam, G. R. Gavalas

Research output: Contribution to journalConference article

39 Citations (Scopus)

Abstract

Thin SiO2 films were heat treated in different gas mixtures to determine their stability in functioning as high-temperature hydrogen permselective membranes. The films were formed within the walls of porous Vycor tubes by SiH4 oxidation in an opposing reactants geometry. Film deposition was carried out at 450 °C in the presence and absence of water vapor. Immediately after formation, the films were highly selective to hydrogen permeation having a H2:N2 permeability ratio of about 3000:1. The films were subsequently heat treated at 450-700°C in dry N2, dry O2, N2-H2O, and O2-H2 mixtures. The permeation rates of H2 and N2 changed depending on the original conditions of film formation as well as on the heat treatment.

Original languageEnglish
Pages (from-to)68-74
Number of pages7
JournalAIChE Symposium Series
Volume85
Issue number268
Publication statusPublished - 1989 Dec 1
EventMembrane Reactor Technology - Washington, DC, USA
Duration: 1988 Nov 271988 Dec 2

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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