Abstract
The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at Vread = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼108cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.
Original language | English |
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Article number | 5986698 |
Pages (from-to) | 3566-3573 |
Number of pages | 8 |
Journal | IEEE Transactions on Electron Devices |
Volume | 58 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2011 Oct |
Keywords
- Atomic force microscopy (AFM)
- aluminum nitride (AlN)
- resistive switching (RS)
- space-charge-limited conduction (SCLC)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering