Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices

Hee Dong Kim; Ho Myoung An; Eui Bok Lee; Tae Geun Kim

doi:10.1109/TED.2011.2162518

Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices

Hee Dong Kim, Ho Myoung An, Eui Bok Lee, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

76 Citations (Scopus)

Abstract

The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at V_read = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼10⁸cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.

Original language	English
Article number	5986698
Pages (from-to)	3566-3573
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	10
DOIs	https://doi.org/10.1109/TED.2011.2162518
Publication status	Published - 2011 Oct

Keywords

Atomic force microscopy (AFM)
aluminum nitride (AlN)
resistive switching (RS)
space-charge-limited conduction (SCLC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2011.2162518

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title = "Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices",

abstract = "The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at Vread = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼108cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.",

keywords = "Atomic force microscopy (AFM), aluminum nitride (AlN), resistive switching (RS), space-charge-limited conduction (SCLC)",

author = "Kim, {Hee Dong} and An, {Ho Myoung} and Lee, {Eui Bok} and Kim, {Tae Geun}",

note = "Funding Information: The authors would like to thank the Samsung Semiconductor Research Center at Korea University for supporting this work. Funding Information: Manuscript received April 8, 2011; revised June 14, 2011 and July 13, 2011; accepted July 14, 2011. Date of publication August 18, 2011; date of current version September 21, 2011. This work was supported in part by the Seoul R&BD program under Grant ST100024 and in part by the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology under Grant 2010-00218. The review of this paper was arranged by Editor J. D. Cressler.",

year = "2011",

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doi = "10.1109/TED.2011.2162518",

language = "English",

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AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Lee, Eui Bok

AU - Kim, Tae Geun

N1 - Funding Information: The authors would like to thank the Samsung Semiconductor Research Center at Korea University for supporting this work. Funding Information: Manuscript received April 8, 2011; revised June 14, 2011 and July 13, 2011; accepted July 14, 2011. Date of publication August 18, 2011; date of current version September 21, 2011. This work was supported in part by the Seoul R&BD program under Grant ST100024 and in part by the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology under Grant 2010-00218. The review of this paper was arranged by Editor J. D. Cressler.

PY - 2011/10

Y1 - 2011/10

N2 - The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at Vread = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼108cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.

AB - The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at Vread = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼108cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.

KW - Atomic force microscopy (AFM)

KW - aluminum nitride (AlN)

KW - resistive switching (RS)

KW - space-charge-limited conduction (SCLC)

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Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices

Abstract

Keywords

ASJC Scopus subject areas

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