TY - JOUR
T1 - Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices
AU - Kim, Hee Dong
AU - An, Ho Myoung
AU - Lee, Eui Bok
AU - Kim, Tae Geun
N1 - Funding Information:
The authors would like to thank the Samsung Semiconductor Research Center at Korea University for supporting this work.
Funding Information:
Manuscript received April 8, 2011; revised June 14, 2011 and July 13, 2011; accepted July 14, 2011. Date of publication August 18, 2011; date of current version September 21, 2011. This work was supported in part by the Seoul R&BD program under Grant ST100024 and in part by the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology under Grant 2010-00218. The review of this paper was arranged by Editor J. D. Cressler.
PY - 2011/10
Y1 - 2011/10
N2 - The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at Vread = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼108cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.
AB - The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at Vread = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼108cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.
KW - Atomic force microscopy (AFM)
KW - aluminum nitride (AlN)
KW - resistive switching (RS)
KW - space-charge-limited conduction (SCLC)
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U2 - 10.1109/TED.2011.2162518
DO - 10.1109/TED.2011.2162518
M3 - Article
AN - SCOPUS:80053195087
VL - 58
SP - 3566
EP - 3573
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 10
M1 - 5986698
ER -