Abstract
The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at Vread = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼108cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.
| Original language | English |
|---|---|
| Article number | 5986698 |
| Pages (from-to) | 3566-3573 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 58 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2011 Oct 1 |
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Keywords
- aluminum nitride (AlN)
- Atomic force microscopy (AFM)
- resistive switching (RS)
- space-charge-limited conduction (SCLC)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices. / Kim, Hee Dong; An, Ho Myoung; Lee, Eui Bok; Kim, Tae Geun.
In: IEEE Transactions on Electron Devices, Vol. 58, No. 10, 5986698, 01.10.2011, p. 3566-3573.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices
AU - Kim, Hee Dong
AU - An, Ho Myoung
AU - Lee, Eui Bok
AU - Kim, Tae Geun
PY - 2011/10/1
Y1 - 2011/10/1
N2 - The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at Vread = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼108cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.
AB - The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at Vread = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼108cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.
KW - aluminum nitride (AlN)
KW - Atomic force microscopy (AFM)
KW - resistive switching (RS)
KW - space-charge-limited conduction (SCLC)
UR - http://www.scopus.com/inward/record.url?scp=80053195087&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80053195087&partnerID=8YFLogxK
U2 - 10.1109/TED.2011.2162518
DO - 10.1109/TED.2011.2162518
M3 - Article
VL - 58
SP - 3566
EP - 3573
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 10
M1 - 5986698
ER -