Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices

Hee Dong Kim; Ho Myoung An; Eui Bok Lee; Tae Geun Kim

doi:10.1109/TED.2011.2162518

Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices

Hee Dong Kim, Ho Myoung An, Eui Bok Lee, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article

66 Citations (Scopus)

Abstract

The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at V_read = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼10⁸cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.

Original language	English
Article number	5986698
Pages (from-to)	3566-3573
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	10
DOIs	https://doi.org/10.1109/TED.2011.2162518
Publication status	Published - 2011 Oct 1

Keywords

Atomic force microscopy (AFM)
aluminum nitride (AlN)
resistive switching (RS)
space-charge-limited conduction (SCLC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2011.2162518

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Cite this

Kim, H. D., An, H. M., Lee, E. B., & Kim, T. G. (2011). Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices. IEEE Transactions on Electron Devices, 58(10), 3566-3573. [5986698]. https://doi.org/10.1109/TED.2011.2162518

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abstract = "The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at Vread = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼108cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.",

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