Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices

Hee Dong Kim, Ho Myoung An, Eui Bok Lee, Tae Geun Kim

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at Vread = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼108cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.

Original languageEnglish
Article number5986698
Pages (from-to)3566-3573
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume58
Issue number10
DOIs
Publication statusPublished - 2011 Oct 1

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Aluminum nitride
Data storage equipment
Durability
RRAM
aluminum nitride

Keywords

  • aluminum nitride (AlN)
  • Atomic force microscopy (AFM)
  • resistive switching (RS)
  • space-charge-limited conduction (SCLC)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices. / Kim, Hee Dong; An, Ho Myoung; Lee, Eui Bok; Kim, Tae Geun.

In: IEEE Transactions on Electron Devices, Vol. 58, No. 10, 5986698, 01.10.2011, p. 3566-3573.

Research output: Contribution to journalArticle

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