The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at Vread = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼108cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.
- Atomic force microscopy (AFM)
- aluminum nitride (AlN)
- resistive switching (RS)
- space-charge-limited conduction (SCLC)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering