Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices

Hee Dong Kim, Ho Myoung An, Eui Bok Lee, Tae Geun Kim

Research output: Contribution to journalArticle

64 Citations (Scopus)


The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at Vread = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ∼108cycles and a retention time of over ten years at 85 °C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.

Original languageEnglish
Article number5986698
Pages (from-to)3566-3573
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number10
Publication statusPublished - 2011 Oct 1



  • aluminum nitride (AlN)
  • Atomic force microscopy (AFM)
  • resistive switching (RS)
  • space-charge-limited conduction (SCLC)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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