TY - JOUR
T1 - Stable electrical performance of AlGaInP-based red micro-light emitting diode by controlling interfacial morphologies of metal contacts
AU - Lee, Da Hoon
AU - Seong, Tae Yeon
AU - Amano, Hiroshi
N1 - Funding Information:
This work was supported by the Global Research Laboratory (GRL) program through the National Research Foundation (NRF) of Korea ( NRF-2017K1A1A2013160 ).
Publisher Copyright:
© 2021 Elsevier B.V.
PY - 2021/8/15
Y1 - 2021/8/15
N2 - The stable electrical performance of micro-light-emitting diodes (micro-LEDs) is critical to display application. We investigated the effect of the interface morphologies of contacts to n-AlInP on the electrical stability of AlGaInP-based red micro-LEDs. Regardless of chip sizes (100 µm or 10 µm-size), micro-LEDs with Pd/Ge contacts gave lower and stable forward voltages than those with AuGe/Ni/Au contacts. When annealed at 450 °C, the AuGe/Ni/Au contact underwent seriously inhomogeneous interfacial reactions, resulting in a large variation of interfacial morphologies across the whole contact/AlInP interface. However, the Pd/Ge contact exhibited similar morphologies across the whole interface when annealed. Further, when operated at 800 A/cm2, micro-LEDs with the Pd/Ge contacts underwent less electrical degradation than the ones with the AuGe/Ni/Au contacts. Based on the electrical and scanning transmission electron microscope (STEM) results, the unstable electrical behavior of red micro-LEDs with the AuGe/Ni/Au contact is discussed.
AB - The stable electrical performance of micro-light-emitting diodes (micro-LEDs) is critical to display application. We investigated the effect of the interface morphologies of contacts to n-AlInP on the electrical stability of AlGaInP-based red micro-LEDs. Regardless of chip sizes (100 µm or 10 µm-size), micro-LEDs with Pd/Ge contacts gave lower and stable forward voltages than those with AuGe/Ni/Au contacts. When annealed at 450 °C, the AuGe/Ni/Au contact underwent seriously inhomogeneous interfacial reactions, resulting in a large variation of interfacial morphologies across the whole contact/AlInP interface. However, the Pd/Ge contact exhibited similar morphologies across the whole interface when annealed. Further, when operated at 800 A/cm2, micro-LEDs with the Pd/Ge contacts underwent less electrical degradation than the ones with the AuGe/Ni/Au contacts. Based on the electrical and scanning transmission electron microscope (STEM) results, the unstable electrical behavior of red micro-LEDs with the AuGe/Ni/Au contact is discussed.
KW - AlGaInP-based red micro-LED
KW - AuGe/Ni/Au
KW - Interfacial morphology
KW - Pd/Ge
KW - Unstable electrical property
UR - http://www.scopus.com/inward/record.url?scp=85103595419&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2021.159629
DO - 10.1016/j.jallcom.2021.159629
M3 - Article
AN - SCOPUS:85103595419
VL - 872
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
SN - 0925-8388
M1 - 159629
ER -