Stable multidomain structures formed in the process of magnetization reversal in GaMnAs ferromagnetic semiconductor thin films

D. Y. Shin, S. J. Chung, Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)

Abstract

The process of magnetization reversal in ferromagnetic Ga(1-x)MnxAs epilayers has been systematically investigated using the planar Hall effect (PHE). Interestingly, we have observed a pronounced asymmetry in the PHE hysteresis when the range of the field scan is restricted to fields below the final magnetization transition. The observed behavior indicates that (a)A multidomain structures are formed as M undergoes a reorientation, (b) the domain landscape formed in this way remains stable even after the magnetic field is switched off, and (c) the reorientation of magnetization directions corresponding to the transition points in PHE takes place separately within each domain.

Original languageEnglish
Article number047201
JournalPhysical review letters
Volume98
Issue number4
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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