Stacked resistive switches for AND/OR logic gates

Myung Ju Kim, Kyung Rock Son, Ju Hyun Park, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review


This paper reports the use of stacked resistive switches as logic gates for implementing the “AND” and “OR” operations. These stacked resistive switches consist of two resistive switches that share a middle electrode, and they operate based on the difference in resistance between the low and high resistance states indicating the logical states of “0” and “1”, respectively. The stacked resistive switches can perform either AND or OR operation, using two read schemes in one device. To perform the AND (or OR) operation, two resistive switches are arranged in a serial (or parallel) connection. AND and OR operations have been successfully demonstrated using the stacked resistive switches. The use of stacked resistive switches as logic gates that utilize the advantages of memristive devices shows the possibility of stateful logic circuits.

Original languageEnglish
Pages (from-to)45-48
Number of pages4
JournalSolid-State Electronics
Publication statusPublished - 2017 Jun 1


  • Logic gate
  • Memristive computing
  • Resistive switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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