Stacked resistive switches for AND/OR logic gates

Myung Ju Kim; Kyung Rock Son; Ju Hyun Park; Tae Geun Kim

doi:10.1016/j.sse.2017.03.006

Stacked resistive switches for AND/OR logic gates

Myung Ju Kim, Kyung Rock Son, Ju Hyun Park, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports the use of stacked resistive switches as logic gates for implementing the “AND” and “OR” operations. These stacked resistive switches consist of two resistive switches that share a middle electrode, and they operate based on the difference in resistance between the low and high resistance states indicating the logical states of “0” and “1”, respectively. The stacked resistive switches can perform either AND or OR operation, using two read schemes in one device. To perform the AND (or OR) operation, two resistive switches are arranged in a serial (or parallel) connection. AND and OR operations have been successfully demonstrated using the stacked resistive switches. The use of stacked resistive switches as logic gates that utilize the advantages of memristive devices shows the possibility of stateful logic circuits.

Original language	English
Pages (from-to)	45-48
Number of pages	4
Journal	Solid-State Electronics
Volume	132
DOIs	https://doi.org/10.1016/j.sse.2017.03.006
Publication status	Published - 2017 Jun 1

Keywords

Logic gate
Memristive computing
Resistive switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2017.03.006

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title = "Stacked resistive switches for AND/OR logic gates",

abstract = "This paper reports the use of stacked resistive switches as logic gates for implementing the “AND” and “OR” operations. These stacked resistive switches consist of two resistive switches that share a middle electrode, and they operate based on the difference in resistance between the low and high resistance states indicating the logical states of “0” and “1”, respectively. The stacked resistive switches can perform either AND or OR operation, using two read schemes in one device. To perform the AND (or OR) operation, two resistive switches are arranged in a serial (or parallel) connection. AND and OR operations have been successfully demonstrated using the stacked resistive switches. The use of stacked resistive switches as logic gates that utilize the advantages of memristive devices shows the possibility of stateful logic circuits.",

keywords = "Logic gate, Memristive computing, Resistive switching",

author = "Kim, {Myung Ju} and Son, {Kyung Rock} and Park, {Ju Hyun} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (No. 2016R1A3B1908249), and the Samsung Semiconductor Research Center in Korea University. Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "2017",

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doi = "10.1016/j.sse.2017.03.006",

language = "English",

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journal = "Solid-State Electronics",

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AU - Kim, Myung Ju

AU - Son, Kyung Rock

AU - Park, Ju Hyun

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (No. 2016R1A3B1908249), and the Samsung Semiconductor Research Center in Korea University. Publisher Copyright: © 2017 Elsevier Ltd Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2017/6/1

Y1 - 2017/6/1

N2 - This paper reports the use of stacked resistive switches as logic gates for implementing the “AND” and “OR” operations. These stacked resistive switches consist of two resistive switches that share a middle electrode, and they operate based on the difference in resistance between the low and high resistance states indicating the logical states of “0” and “1”, respectively. The stacked resistive switches can perform either AND or OR operation, using two read schemes in one device. To perform the AND (or OR) operation, two resistive switches are arranged in a serial (or parallel) connection. AND and OR operations have been successfully demonstrated using the stacked resistive switches. The use of stacked resistive switches as logic gates that utilize the advantages of memristive devices shows the possibility of stateful logic circuits.

AB - This paper reports the use of stacked resistive switches as logic gates for implementing the “AND” and “OR” operations. These stacked resistive switches consist of two resistive switches that share a middle electrode, and they operate based on the difference in resistance between the low and high resistance states indicating the logical states of “0” and “1”, respectively. The stacked resistive switches can perform either AND or OR operation, using two read schemes in one device. To perform the AND (or OR) operation, two resistive switches are arranged in a serial (or parallel) connection. AND and OR operations have been successfully demonstrated using the stacked resistive switches. The use of stacked resistive switches as logic gates that utilize the advantages of memristive devices shows the possibility of stateful logic circuits.

KW - Logic gate

KW - Memristive computing

KW - Resistive switching

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SP - 45

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JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Stacked resistive switches for AND/OR logic gates

Abstract

Keywords

ASJC Scopus subject areas

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