Static and low frequency noise (LFN) characterrizations in densely packed single-walled carbon nanotube thin film transistors (CNT-TFTs) are presented. To this end, the Y function method (YFM) is employed for parameter extraction in order to alleviate the influence of the channel access resistance. The low field mobility (μ0), threshold voltage (Vth), mobility attenuation factor (θ) and on/off current ratio have been evaluated with respect to gate mask length (Lmask). The 1/f behavior of LFN has been interpreted with the carrier number and correlated mobility fluctuation model (CNF-CMF). A detailed analysis of the defect density surrounding the surface of carbon nanotube and the Coulomb scattering parameter has also been performed.