Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

Min Kyu Joo, Mireille Mouis, Dae Young Jeon, Gyu-Tae Kim, Un Jeong Kim, Gérard Ghibaudo

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Static and low frequency noise (LFN) characterizations in two-dimensional (2D) N-type random network thin film transistors (RN-TFTs) based on single-walled carbon nanotubes were presented. For the electrical parameter extraction, the Y-function method was used to suppress the series resistance (Rsd) influence. The gate-to-channel capacitance (Cgc) was directly measured by the split capacitance-to-voltage method and compared to 2D metal-plate capacitance model (C2D). In addition, to account for the percolation-dominated 2D RN-TFTs, a numerical percolation simulation was performed. LFN measurements were also carried out and the results were well interpreted by the carrier number and correlated mobility fluctuation model. Finally, one-dimensional (1D) cylindrical analytical capacitance based model (C1D) was suggested and applied to provide better consistency between all electrical parameters based on experimental and simulation results.

Original languageEnglish
Article number154503
JournalJournal of Applied Physics
Issue number15
Publication statusPublished - 2013 Oct 21


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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