Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors

So Jeong Park, Dae Young Jeon, Seung Eon Ahn, Sanghun Jeon, Laurent Montès, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticle

12 Citations (Scopus)


The static characteristics and low frequency noise of amorphous InHfZnO (a-IHZO) thin film transistor (TFT) were comprehensively investigated. The effective mobility extracted from the transfer curve and gate-to-channel capacitance-voltage characteristic is compared with that obtained by Y-function adopted on amorphous-oxide-semiconductor TFT. The static characteristics at low temperature show nearly independent electrical property of a-IHZO TFT, illustrating the degenerate behavior of a-IHZO TFT inversion layer. Noise measurement was performed on a-IHZO TFT and indicates that fluctuations stem from carrier trapping-detrapping at the interface between the oxide and channel layer and/or in bulk traps. Based on the analysis with static characteristics and low frequency noise of a-IHZO TFT, a numerical model was proposed and the model including band-tail states conduction and interface traps provides a good agreement with the experimental results.

Original languageEnglish
Pages (from-to)560-565
Number of pages6
JournalThin Solid Films
Publication statusPublished - 2013 Dec 2



  • Direct-current characteristics
  • Electrical parameter extraction
  • Low frequency noise
  • Numerical simulation
  • Thin film transistor
  • a-InHfZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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