Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors

So Jeong Park; Dae Young Jeon; Seung Eon Ahn; Sanghun Jeon; Laurent Montès; Gyu Tae Kim; Gérard Ghibaudo

doi:10.1016/j.tsf.2013.09.024

Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors

So Jeong Park, Dae Young Jeon, Seung Eon Ahn, Sanghun Jeon, Laurent Montès, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The static characteristics and low frequency noise of amorphous InHfZnO (a-IHZO) thin film transistor (TFT) were comprehensively investigated. The effective mobility extracted from the transfer curve and gate-to-channel capacitance-voltage characteristic is compared with that obtained by Y-function adopted on amorphous-oxide-semiconductor TFT. The static characteristics at low temperature show nearly independent electrical property of a-IHZO TFT, illustrating the degenerate behavior of a-IHZO TFT inversion layer. Noise measurement was performed on a-IHZO TFT and indicates that fluctuations stem from carrier trapping-detrapping at the interface between the oxide and channel layer and/or in bulk traps. Based on the analysis with static characteristics and low frequency noise of a-IHZO TFT, a numerical model was proposed and the model including band-tail states conduction and interface traps provides a good agreement with the experimental results.

Original language	English
Pages (from-to)	560-565
Number of pages	6
Journal	Thin Solid Films
Volume	548
DOIs	https://doi.org/10.1016/j.tsf.2013.09.024
Publication status	Published - 2013 Dec 2

Keywords

Direct-current characteristics
Electrical parameter extraction
Low frequency noise
Numerical simulation
Thin film transistor
a-InHfZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2013.09.024

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title = "Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors",

abstract = "The static characteristics and low frequency noise of amorphous InHfZnO (a-IHZO) thin film transistor (TFT) were comprehensively investigated. The effective mobility extracted from the transfer curve and gate-to-channel capacitance-voltage characteristic is compared with that obtained by Y-function adopted on amorphous-oxide-semiconductor TFT. The static characteristics at low temperature show nearly independent electrical property of a-IHZO TFT, illustrating the degenerate behavior of a-IHZO TFT inversion layer. Noise measurement was performed on a-IHZO TFT and indicates that fluctuations stem from carrier trapping-detrapping at the interface between the oxide and channel layer and/or in bulk traps. Based on the analysis with static characteristics and low frequency noise of a-IHZO TFT, a numerical model was proposed and the model including band-tail states conduction and interface traps provides a good agreement with the experimental results.",

keywords = "Direct-current characteristics, Electrical parameter extraction, Low frequency noise, Numerical simulation, Thin film transistor, a-InHfZnO",

author = "Park, {So Jeong} and Jeon, {Dae Young} and Ahn, {Seung Eon} and Sanghun Jeon and Laurent Mont{\`e}s and Kim, {Gyu Tae} and G{\'e}rard Ghibaudo",

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T1 - Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors

AU - Park, So Jeong

AU - Jeon, Dae Young

AU - Ahn, Seung Eon

AU - Jeon, Sanghun

AU - Montès, Laurent

AU - Kim, Gyu Tae

AU - Ghibaudo, Gérard

PY - 2013/12/2

Y1 - 2013/12/2

N2 - The static characteristics and low frequency noise of amorphous InHfZnO (a-IHZO) thin film transistor (TFT) were comprehensively investigated. The effective mobility extracted from the transfer curve and gate-to-channel capacitance-voltage characteristic is compared with that obtained by Y-function adopted on amorphous-oxide-semiconductor TFT. The static characteristics at low temperature show nearly independent electrical property of a-IHZO TFT, illustrating the degenerate behavior of a-IHZO TFT inversion layer. Noise measurement was performed on a-IHZO TFT and indicates that fluctuations stem from carrier trapping-detrapping at the interface between the oxide and channel layer and/or in bulk traps. Based on the analysis with static characteristics and low frequency noise of a-IHZO TFT, a numerical model was proposed and the model including band-tail states conduction and interface traps provides a good agreement with the experimental results.

AB - The static characteristics and low frequency noise of amorphous InHfZnO (a-IHZO) thin film transistor (TFT) were comprehensively investigated. The effective mobility extracted from the transfer curve and gate-to-channel capacitance-voltage characteristic is compared with that obtained by Y-function adopted on amorphous-oxide-semiconductor TFT. The static characteristics at low temperature show nearly independent electrical property of a-IHZO TFT, illustrating the degenerate behavior of a-IHZO TFT inversion layer. Noise measurement was performed on a-IHZO TFT and indicates that fluctuations stem from carrier trapping-detrapping at the interface between the oxide and channel layer and/or in bulk traps. Based on the analysis with static characteristics and low frequency noise of a-IHZO TFT, a numerical model was proposed and the model including band-tail states conduction and interface traps provides a good agreement with the experimental results.

KW - Direct-current characteristics

KW - Electrical parameter extraction

KW - Low frequency noise

KW - Numerical simulation

KW - Thin film transistor

KW - a-InHfZnO

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DO - 10.1016/j.tsf.2013.09.024

M3 - Article

AN - SCOPUS:84887464859

SN - 0040-6090

VL - 548

SP - 560

EP - 565

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors

Abstract

Keywords

ASJC Scopus subject areas

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