Static Random Access Memory Characteristics of Single-Gated Feedback Field-Effect Transistors

Jinsun Cho, Doohyeok Lim, Sola Woo, Kyungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


In this paper, we propose a novel static random access memory (SRAM) unit cell design and its array structure consisting of single-gated feedback field-effect transistors (FBFETs). To verify the SRAM characteristics, the basic memory operations and write disturbances of the unit cell are investigated through the mixed-mode technology computer-aided design simulations. The unit cell exhibits the superior SRAM characteristics including a write speed of 0.6 ns, a fast read-out speed of 0.1 ns, and a retention time of 3600 s. Furthermore, the unit cell design exhibits advantages in density, with a small cell area of 8F2, and in the power consumption; the standby power consumption is 0.24 nW/bit for holding '1' and negligible for holding '0.' Moreover, our SRAM array shows reliable 3 × 3 array operations without any disturbances. This paper demonstrates the promising potential of the FBFET SRAM for high-performance, high-density, and low-power memory applications.

Original languageEnglish
Article number8556508
Pages (from-to)413-419
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number1
Publication statusPublished - 2019 Jan


  • Feedback field-effect transistors (FBFETs)
  • positive feedback loop
  • static random access memory (SRAM)
  • transient simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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