Static Random Access Memory Characteristics of Single-Gated Feedback Field-Effect Transistors

Jinsun Cho, Doohyeok Lim, Sola Woo, Kyungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this paper, we propose a novel static random access memory (SRAM) unit cell design and its array structure consisting of single-gated feedback field-effect transistors (FBFETs). To verify the SRAM characteristics, the basic memory operations and write disturbances of the unit cell are investigated through the mixed-mode technology computer-aided design simulations. The unit cell exhibits the superior SRAM characteristics including a write speed of 0.6 ns, a fast read-out speed of 0.1 ns, and a retention time of 3600 s. Furthermore, the unit cell design exhibits advantages in density, with a small cell area of 8F2, and in the power consumption; the standby power consumption is 0.24 nW/bit for holding '1' and negligible for holding '0.' Moreover, our SRAM array shows reliable 3 × 3 array operations without any disturbances. This paper demonstrates the promising potential of the FBFET SRAM for high-performance, high-density, and low-power memory applications.

Original languageEnglish
Article number8556508
Pages (from-to)413-419
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume66
Issue number1
DOIs
Publication statusPublished - 2019 Jan 1

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Field effect transistors
Feedback
Data storage equipment
Electric power utilization
Computer aided design

Keywords

  • Feedback field-effect transistors (FBFETs)
  • positive feedback loop
  • static random access memory (SRAM)
  • transient simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Static Random Access Memory Characteristics of Single-Gated Feedback Field-Effect Transistors. / Cho, Jinsun; Lim, Doohyeok; Woo, Sola; Cho, Kyungah; Kim, Sangsig.

In: IEEE Transactions on Electron Devices, Vol. 66, No. 1, 8556508, 01.01.2019, p. 413-419.

Research output: Contribution to journalArticle

Cho, Jinsun ; Lim, Doohyeok ; Woo, Sola ; Cho, Kyungah ; Kim, Sangsig. / Static Random Access Memory Characteristics of Single-Gated Feedback Field-Effect Transistors. In: IEEE Transactions on Electron Devices. 2019 ; Vol. 66, No. 1. pp. 413-419.
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