Status and new evaluation method of interfacial oxide between the directly-bonded Si wafer pairs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We discovered that the shapes of the (111) facet structures were closely related to the disintegration, the spheroidization, and the stabilization of the native interfacial oxide layer in directly bonded Si wafer pairs. These (111) facet structures are generated from the anisotropic etching of (110) cross-section of bonded (100) Si wafer pairs. Also, we confirmed that most of the interfacial oxide existing at the bonding interface of a well-aligned wafer pairs were disintegrated and spheroidized by high-temperature annealing process above 900°C.

Original languageEnglish
Title of host publicationProceedings of the IEEE Micro Electro Mechanical Systems (MEMS)
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages337-342
Number of pages6
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1995 9th Annual International Workshop on Micro Electro Mechanical Systems - San Diego, CA, USA
Duration: 1996 Feb 111996 Feb 15

Other

OtherProceedings of the 1995 9th Annual International Workshop on Micro Electro Mechanical Systems
CitySan Diego, CA, USA
Period96/2/1196/2/15

Fingerprint

Anisotropic etching
Oxides
Disintegration
Stabilization
Annealing
Temperature

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Mechanical Engineering

Cite this

Ju, B. K., Lee, Y-H., & Oh, M. H. (1996). Status and new evaluation method of interfacial oxide between the directly-bonded Si wafer pairs. In Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS) (pp. 337-342). Piscataway, NJ, United States: IEEE.

Status and new evaluation method of interfacial oxide between the directly-bonded Si wafer pairs. / Ju, Byeong Kwon; Lee, Yun-Hi; Oh, Myung H.

Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). Piscataway, NJ, United States : IEEE, 1996. p. 337-342.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ju, BK, Lee, Y-H & Oh, MH 1996, Status and new evaluation method of interfacial oxide between the directly-bonded Si wafer pairs. in Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). IEEE, Piscataway, NJ, United States, pp. 337-342, Proceedings of the 1995 9th Annual International Workshop on Micro Electro Mechanical Systems, San Diego, CA, USA, 96/2/11.
Ju BK, Lee Y-H, Oh MH. Status and new evaluation method of interfacial oxide between the directly-bonded Si wafer pairs. In Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). Piscataway, NJ, United States: IEEE. 1996. p. 337-342
Ju, Byeong Kwon ; Lee, Yun-Hi ; Oh, Myung H. / Status and new evaluation method of interfacial oxide between the directly-bonded Si wafer pairs. Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). Piscataway, NJ, United States : IEEE, 1996. pp. 337-342
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