Status and new evaluation method of interfacial oxide between the directly-bonded Si wafer pairs

Byeong K. Ju, Yun H. Lee, Myung H. Oh

Research output: Contribution to conferencePaper

Abstract

We discovered that the shapes of the (111) facet structures were closely related to the disintegration, the spheroidization, and the stabilization of the native interfacial oxide layer in directly bonded Si wafer pairs. These (111) facet structures are generated from the anisotropic etching of (110) cross-section of bonded (100) Si wafer pairs. Also, we confirmed that most of the interfacial oxide existing at the bonding interface of a well-aligned wafer pairs were disintegrated and spheroidized by high-temperature annealing process above 900°C.

Original languageEnglish
Pages337-342
Number of pages6
Publication statusPublished - 1996 Jan 1
EventProceedings of the 1995 9th Annual International Workshop on Micro Electro Mechanical Systems - San Diego, CA, USA
Duration: 1996 Feb 111996 Feb 15

Other

OtherProceedings of the 1995 9th Annual International Workshop on Micro Electro Mechanical Systems
CitySan Diego, CA, USA
Period96/2/1196/2/15

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Ju, B. K., Lee, Y. H., & Oh, M. H. (1996). Status and new evaluation method of interfacial oxide between the directly-bonded Si wafer pairs. 337-342. Paper presented at Proceedings of the 1995 9th Annual International Workshop on Micro Electro Mechanical Systems, San Diego, CA, USA, .