TY - JOUR
T1 - Steep switching characteristics of single-gated feedback field-effect transistors
AU - Kim, Minsuk
AU - Kim, Yoonjoong
AU - Lim, Doohyeok
AU - Woo, Sola
AU - Cho, Kyoungah
AU - Kim, Sangsig
N1 - Funding Information:
This work was partly supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (NRF-2013R1A2A1A03070750, NRF- 2015R1A2A1A15055437), and the Brain Korea 21 Plus Project in 2016.
Publisher Copyright:
© 2016 IOP Publishing Ltd.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/2/3
Y1 - 2017/2/3
N2 - In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec-1, an on/off current ratio of approximately 1011, and an on-current of approximately 10-4 A at room temperature, demonstrating that the switching characteristics are superior to those of other silicon-based devices. In addition, the device parameters that affect the device performance, hysteresis characteristics, and temperature-dependent device characteristics are discussed in detail.
AB - In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec-1, an on/off current ratio of approximately 1011, and an on-current of approximately 10-4 A at room temperature, demonstrating that the switching characteristics are superior to those of other silicon-based devices. In addition, the device parameters that affect the device performance, hysteresis characteristics, and temperature-dependent device characteristics are discussed in detail.
KW - feedback field-effect transistors
KW - positive feedback loop
KW - steep switching characteristics
KW - subthreshold swing
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U2 - 10.1088/1361-6528/28/5/055205
DO - 10.1088/1361-6528/28/5/055205
M3 - Article
C2 - 28032609
AN - SCOPUS:85009060717
VL - 28
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 5
M1 - 055205
ER -