Steep switching characteristics of single-gated feedback field-effect transistors

Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec-1, an on/off current ratio of approximately 1011, and an on-current of approximately 10-4 A at room temperature, demonstrating that the switching characteristics are superior to those of other silicon-based devices. In addition, the device parameters that affect the device performance, hysteresis characteristics, and temperature-dependent device characteristics are discussed in detail.

Original languageEnglish
Article number055205
JournalNanotechnology
Volume28
Issue number5
DOIs
Publication statusPublished - 2017 Feb 3

Keywords

  • feedback field-effect transistors
  • positive feedback loop
  • steep switching characteristics
  • subthreshold swing

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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