Step feature observed in the angular dependence of magnetization switching fields in GaMnAs micro-device

Taehee Yoo, Dongyun Shin, Jungtaek Kim, Hyungchan Kim, Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The magnetization switching phenomena of GaMnAs Hall devices have been investigated by using the planar Hall effect (PHE) measurement. Though two different sizes of Hall bar devices, width of 300 and of 10 μm, show very similar Curie temperature, their magnetization switching fields behave significantly different. While the angle dependence of magnetization switching field of the 300 μm device showed typical rectangular shape behavior with an applied magnetic field angle in the polar plot, that of the 10 μm device exhibited large step at 〈1 1 0〉 crystallographic directions, breaking the continuity of the switching field in angle dependence. Such unusual phenomenon observed in the 10 μm device was discussed in terms of the change in magnetic anisotropy by the fabrication of micro-device.

Original languageEnglish
Pages (from-to)773-776
Number of pages4
JournalCurrent Applied Physics
Volume9
Issue number4
DOIs
Publication statusPublished - 2009 Jul

Keywords

  • Ferromagnetic semiconductor
  • Magnetic anisotropy
  • Planar Hall effect

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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