Strain and doping effects on the antiferromagnetism of AB-stacked bilayer silicene

Kyu Won Lee, Cheol Eui Lee

Research output: Contribution to journalArticle

Abstract

We have investigated the effects of biaxial strain and charge doping on the antiferromagnetic order of AB-stacked bilayer silicene by using the density functional theory calculations. The antiferromagnetic order, which decreases and disappears with compressive strain and charge doping, increases with tensile strain and undergoes a metal–insulator–metal transition. Increased lattice constant increases the overlap between the conduction and valence bands and the density of states at the Fermi level, which are responsible for the antiferromagnetic order.

Original languageEnglish
Article number411816
JournalPhysica B: Condensed Matter
Volume577
DOIs
Publication statusPublished - 2020 Jan 15

Fingerprint

Antiferromagnetism
antiferromagnetism
Doping (additives)
Tensile strain
Valence bands
Fermi level
Conduction bands
Lattice constants
Density functional theory
conduction bands
density functional theory
valence

Keywords

  • AB-stacked bilayer silicene
  • Antiferromagnetic order
  • Biaxial strain
  • Charge doping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Strain and doping effects on the antiferromagnetism of AB-stacked bilayer silicene. / Lee, Kyu Won; Lee, Cheol Eui.

In: Physica B: Condensed Matter, Vol. 577, 411816, 15.01.2020.

Research output: Contribution to journalArticle

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