Strain-dependent characteristics of triangular silicon nanowire-based field-effect transistors on flexible plastics

Jamin Koo, Youngin Jeon, Myeongwon Lee, Sangsig Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Top-gate field-effect transistors (FETs) based on triangular silicon nanowires (SiNWs) obtained from a silicon bulk wafer using a conventional silicon manufacturing technology are constructed on flexible plastic substrates. Their field-effect mobility and peak transconductance are enhanced by 10% in the upwardly bent state and by 29% in the downwardly bent state at a strain of 1.02%, compared with the flat state. The strain effect resulting from the bending of the flexible substrates is higher in the downward state than in the upward state, and the increase in strain improves the performance of SiNW-based FETs. Moreover, their device performance is stable even after bending the substrate several thousand times.

Original languageEnglish
Article number065001
JournalJapanese Journal of Applied Physics
Volume50
Issue number6 PART 1
DOIs
Publication statusPublished - 2011 Jun 1

Fingerprint

Field effect transistors
Nanowires
nanowires
plastics
field effect transistors
Plastics
Silicon
silicon
Substrates
Gates (transistor)
Transconductance
transconductance
manufacturing
wafers

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Strain-dependent characteristics of triangular silicon nanowire-based field-effect transistors on flexible plastics. / Koo, Jamin; Jeon, Youngin; Lee, Myeongwon; Kim, Sangsig.

In: Japanese Journal of Applied Physics, Vol. 50, No. 6 PART 1, 065001, 01.06.2011.

Research output: Contribution to journalArticle

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