Strain effects on optoelectronic characteristics of laterally arrayed silicon nanowires on a flexible substrate

Jinyong Choi, Kyoungah Cho, Sanging Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this study, we array n-type silicon nanowires (SiNWs) on a flexible plastic substrate and investigate the effects of tensile strain on the optoelectronic characteristics of the laterally arrayed SiNWs under the illumination of 633-nm-wavelength light in air at room temperature. The unstrained SiNW array has an efficiency of approximately 5.3 A/W at a bias voltage of 5 V. When the plastic substrate suffers from a tensile strain of up to 2.2% in parallel to the channels of SiNWs, dark current and photocurrent increase markedly owing to the change in their band structure caused by the tensile strain.

Original languageEnglish
Article number01BH02
JournalJapanese journal of applied physics
Volume50
Issue number1 PART 3
DOIs
Publication statusPublished - 2011 Jan

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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