Strain effects on optoelectronic characteristics of laterally arrayed silicon nanowires on a flexible substrate

Jinyong Choi, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this study, we array n-type silicon nanowires (SiNWs) on a flexible plastic substrate and investigate the effects of tensile strain on the optoelectronic characteristics of the laterally arrayed SiNWs under the illumination of 633-nm-wavelength light in air at room temperature. The unstrained SiNW array has an efficiency of approximately 5.3 A/W at a bias voltage of 5 V. When the plastic substrate suffers from a tensile strain of up to 2.2% in parallel to the channels of SiNWs, dark current and photocurrent increase markedly owing to the change in their band structure caused by the tensile strain.

Original languageEnglish
Article number01BH02
JournalJapanese Journal of Applied Physics
Volume50
Issue number1 PART 3
DOIs
Publication statusPublished - 2011 Jan 1

Fingerprint

Optoelectronic devices
Nanowires
Tensile strain
nanowires
Silicon
silicon
Substrates
plastics
Plastics
Dark currents
Bias voltage
dark current
Photocurrents
Band structure
photocurrents
Lighting
illumination
Wavelength
air
electric potential

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Strain effects on optoelectronic characteristics of laterally arrayed silicon nanowires on a flexible substrate. / Choi, Jinyong; Cho, Kyoungah; Kim, Sangsig.

In: Japanese Journal of Applied Physics, Vol. 50, No. 1 PART 3, 01BH02, 01.01.2011.

Research output: Contribution to journalArticle

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