Strain measurement in 6H-SiC under external stress

J. Kim, F. Ren, S. J. Pearton

Research output: Contribution to journalArticle

Abstract

6H-SiC was chosen to measure the strain by external stress using micro-Raman scattering. Under various external stress conditions, our experiments showed that the top part of 6H-SiC was under a tensile stress while the bottom part of 6H-SiC was under a compressive stress. When it was bent more and more, the stress was increased at both top and bottom. This data is very helpful in understanding the mechanical properties of a 6H-SiC cantilever which is very promising in SiC micro electro mechanical system (MEMS) applications in harsh environments.

Original languageEnglish
Pages (from-to)239-240
Number of pages2
JournalJournal of Ceramic Processing Research
Volume7
Issue number3
Publication statusPublished - 2006

Keywords

  • 6H-SiC
  • MEMS
  • Raman
  • Stain
  • Stress

ASJC Scopus subject areas

  • Ceramics and Composites

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