Strain measurement in 6H-SiC under external stress

Ji Hyun Kim, F. Ren, S. J. Pearton

Research output: Contribution to journalArticle

Abstract

6H-SiC was chosen to measure the strain by external stress using micro-Raman scattering. Under various external stress conditions, our experiments showed that the top part of 6H-SiC was under a tensile stress while the bottom part of 6H-SiC was under a compressive stress. When it was bent more and more, the stress was increased at both top and bottom. This data is very helpful in understanding the mechanical properties of a 6H-SiC cantilever which is very promising in SiC micro electro mechanical system (MEMS) applications in harsh environments.

Original languageEnglish
Pages (from-to)239-240
Number of pages2
JournalJournal of Ceramic Processing Research
Volume7
Issue number3
Publication statusPublished - 2006 Oct 31

Fingerprint

Strain measurement
Compressive stress
Tensile stress
Raman scattering
Mechanical properties
Experiments

Keywords

  • 6H-SiC
  • MEMS
  • Raman
  • Stain
  • Stress

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Strain measurement in 6H-SiC under external stress. / Kim, Ji Hyun; Ren, F.; Pearton, S. J.

In: Journal of Ceramic Processing Research, Vol. 7, No. 3, 31.10.2006, p. 239-240.

Research output: Contribution to journalArticle

Kim, Ji Hyun ; Ren, F. ; Pearton, S. J. / Strain measurement in 6H-SiC under external stress. In: Journal of Ceramic Processing Research. 2006 ; Vol. 7, No. 3. pp. 239-240.
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