Strain Simulation of Diamond NV Centers in High Q-Factor Diamond Membranes

Sunuk Choe, Donghun Lee

Research output: Contribution to journalArticle

Abstract

In the field of strain-based hybrid mechanical systems, understanding the local strain profile and realizing strong strain coupling is crucial. Here a theoretical investigation is conducted on hybrid devices consisting of diamond membranes with a high Q-factor and embedded nitrogen-vacancy defect centers. Simulation based on a three-dimensional finite element method reveals microscopic strain distribution in the membrane’s basis as well as in the defect’s basis. For strong strain coupling, we design diamond phononic crystal devices with a honeycomb lattice, enabling localized strain in a small mode volume and an enhanced Q-factor. The hybrid devices studied in this paper are promising candidates for various quantum applications, including strain-mediated long range spin-spin interaction, multi-mode optomechanics, and topological operations with exceptional points.

Original languageEnglish
Pages (from-to)95-99
Number of pages5
JournalJournal of the Korean Physical Society
Volume73
Issue number1
DOIs
Publication statusPublished - 2018 Jul 1

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Q factors
diamonds
membranes
simulation
strain distribution
defects
finite element method
nitrogen
profiles
crystals
interactions

Keywords

  • Diamond mechanical oscillator
  • Diamond NV center
  • Strain

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Strain Simulation of Diamond NV Centers in High Q-Factor Diamond Membranes. / Choe, Sunuk; Lee, Donghun.

In: Journal of the Korean Physical Society, Vol. 73, No. 1, 01.07.2018, p. 95-99.

Research output: Contribution to journalArticle

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