Strained gallium nitride nanowires

Hee Won Seo, Seung Yong Bae, Jeunghee Park, Hyunik Yang, Kwang Soo Park, Sangsig Kim

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139 Citations (Scopus)

Abstract

Strained gallium nitride nanowires were synthesized on silicon substrates using chemical vapor deposition by the reaction of gallium and gallium nitride mixture with ammonia. The nanowires were having single crystalline wurtzite structure and their diameter was 25 nm and length was 20-40 μm. The x-ray diffraction and Raman scattering data showed that the separations of the neighboring lattice planes along the growth direction were shorter than those of bulk gallium nitride. The temperature-dependent photoluminescence of the nanowires showed a band gap in the energy range of 2.9-3.6 eV.

Original languageEnglish
Pages (from-to)9492-9499
Number of pages8
JournalJournal of Chemical Physics
Volume116
Issue number21
DOIs
Publication statusPublished - 2002 Jun 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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    Seo, H. W., Bae, S. Y., Park, J., Yang, H., Park, K. S., & Kim, S. (2002). Strained gallium nitride nanowires. Journal of Chemical Physics, 116(21), 9492-9499. https://doi.org/10.1063/1.1475748