Strained Ge overlayer on a surface

Se-Jong Kahng, Y. Ha, D. Moon

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The epitaxial growth behavior and the strain distribution of Ge overlayer grown on (Formula presented) surface were studied with medium energy ion scattering spectroscopy and scanning tunneling microscopy. We were able to grow flat Ge overlayers up to ten monolayers, thicker than the known critical thickness of Stranski-Krastanov growth mode, with hydrogen surfactant, as suggested by recent theories. By comparing the dips of Ge overlayer and Si bulk in the angular scan of ion blocking, we found that the flat Ge overlayer is uniformly strained in the direction perpendicular to a surface while the overlayer with three-dimensional islands is fully relaxed at the thickness of ten monolayers.

Original languageEnglish
Pages (from-to)10827-10831
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number16
DOIs
Publication statusPublished - 2000 Jan 1
Externally publishedYes

Fingerprint

Monolayers
Ions
strain distribution
ion scattering
Scanning tunneling microscopy
Epitaxial growth
Surface-Active Agents
scanning tunneling microscopy
Hydrogen
Surface active agents
surfactants
Spectroscopy
Scattering
hydrogen
spectroscopy
ions
energy
Direction compound

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Strained Ge overlayer on a surface. / Kahng, Se-Jong; Ha, Y.; Moon, D.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 61, No. 16, 01.01.2000, p. 10827-10831.

Research output: Contribution to journalArticle

Kahng, Se-Jong ; Ha, Y. ; Moon, D. / Strained Ge overlayer on a surface. In: Physical Review B - Condensed Matter and Materials Physics. 2000 ; Vol. 61, No. 16. pp. 10827-10831.
@article{7d8c369348ad42ee95cae3aa35282176,
title = "Strained Ge overlayer on a surface",
abstract = "The epitaxial growth behavior and the strain distribution of Ge overlayer grown on (Formula presented) surface were studied with medium energy ion scattering spectroscopy and scanning tunneling microscopy. We were able to grow flat Ge overlayers up to ten monolayers, thicker than the known critical thickness of Stranski-Krastanov growth mode, with hydrogen surfactant, as suggested by recent theories. By comparing the dips of Ge overlayer and Si bulk in the angular scan of ion blocking, we found that the flat Ge overlayer is uniformly strained in the direction perpendicular to a surface while the overlayer with three-dimensional islands is fully relaxed at the thickness of ten monolayers.",
author = "Se-Jong Kahng and Y. Ha and D. Moon",
year = "2000",
month = "1",
day = "1",
doi = "10.1103/PhysRevB.61.10827",
language = "English",
volume = "61",
pages = "10827--10831",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Strained Ge overlayer on a surface

AU - Kahng, Se-Jong

AU - Ha, Y.

AU - Moon, D.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - The epitaxial growth behavior and the strain distribution of Ge overlayer grown on (Formula presented) surface were studied with medium energy ion scattering spectroscopy and scanning tunneling microscopy. We were able to grow flat Ge overlayers up to ten monolayers, thicker than the known critical thickness of Stranski-Krastanov growth mode, with hydrogen surfactant, as suggested by recent theories. By comparing the dips of Ge overlayer and Si bulk in the angular scan of ion blocking, we found that the flat Ge overlayer is uniformly strained in the direction perpendicular to a surface while the overlayer with three-dimensional islands is fully relaxed at the thickness of ten monolayers.

AB - The epitaxial growth behavior and the strain distribution of Ge overlayer grown on (Formula presented) surface were studied with medium energy ion scattering spectroscopy and scanning tunneling microscopy. We were able to grow flat Ge overlayers up to ten monolayers, thicker than the known critical thickness of Stranski-Krastanov growth mode, with hydrogen surfactant, as suggested by recent theories. By comparing the dips of Ge overlayer and Si bulk in the angular scan of ion blocking, we found that the flat Ge overlayer is uniformly strained in the direction perpendicular to a surface while the overlayer with three-dimensional islands is fully relaxed at the thickness of ten monolayers.

UR - http://www.scopus.com/inward/record.url?scp=4244062852&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4244062852&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.61.10827

DO - 10.1103/PhysRevB.61.10827

M3 - Article

VL - 61

SP - 10827

EP - 10831

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 16

ER -