Strained Ge overlayer on a surface

S. Kahng, Y. Ha, D. Moon

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The epitaxial growth behavior and the strain distribution of Ge overlayer grown on (Formula presented) surface were studied with medium energy ion scattering spectroscopy and scanning tunneling microscopy. We were able to grow flat Ge overlayers up to ten monolayers, thicker than the known critical thickness of Stranski-Krastanov growth mode, with hydrogen surfactant, as suggested by recent theories. By comparing the dips of Ge overlayer and Si bulk in the angular scan of ion blocking, we found that the flat Ge overlayer is uniformly strained in the direction perpendicular to a surface while the overlayer with three-dimensional islands is fully relaxed at the thickness of ten monolayers.

Original languageEnglish
Pages (from-to)10827-10831
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number16
DOIs
Publication statusPublished - 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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