Stress and the van hove singularities of hole magnetoplasmons

S. R.Eric Yang, A. H. MacDonald

Research output: Contribution to journalArticlepeer-review

Abstract

The hole magnetoplasmon dispersion of GaAs/AlGaAs heterostructures is calculated in the presence of uniaxial stress using a time-dependent Hartree-Fock approximation which becomes exact in the limit of large Landau level separations. We find that the stress affects both the magnitude of cyclotron resonance positions shifted by hole-hole interactions and the sharpness of the Van Hove singularities present in the density of states of hole magnetoplasmons. Both results are consequences of strong heavy and light hole mixing, and differ from the case of an electron gas, where cyclotron resonance position shifts are forbidden by Kohn's theorem. The dependence of the singularities on the applied uniaxial stress should provide a test of our theory.

Original languageEnglish
Pages (from-to)402-404
Number of pages3
JournalSurface Science
Volume229
Issue number1-3
DOIs
Publication statusPublished - 1990 Apr 2
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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