Stress relaxation in Si-doped GaN studied by Raman spectroscopy

In-Hwan Lee, In Hoon Choi, Cheul Ro Lee, Eun Joo Shin, Dongho Kim, Sam Kyu Noh, Sung Jin Son, Ki Yong Lim, Hyung Jae Lee

Research output: Contribution to journalArticle

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Abstract

We report the Si-doping-induced relaxation of residual stress in GaN epitaxial layers grown on (0001) sapphire substrate by the metalorganic vapor phase epitaxy technique. Micro-Raman spectroscopy is used to assess stress situation in the films with systematically modulated doping concentration from 4.0×10 17 up to 1.6×10 19 cm -3 . As the Si-doping concentration increases, a monotonie decrease of the E 2 phonon frequency is observed, which signifies gradual relaxation of the stress in the film. The layers are fully relaxed when electron concentration exceeds 1.6 ×10 19 cm -3 . The linear coefficient of shift in Raman frequency (ω) induced by the in-plane biaxial compressive stress (σ ) is estimated to be Δω/Δσ =7.7 cm -1 /GPa. We suggest that Si doping increases density of misfit dislocation, judging from linewidth of x-ray rocking curve.

Original languageEnglish
Pages (from-to)5787-5791
Number of pages5
JournalJournal of Applied Physics
Volume83
Issue number11
DOIs
Publication statusPublished - 1998 Jun 1

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stress relaxation
Raman spectroscopy
vapor phase epitaxy
residual stress
sapphire
shift
curves
coefficients
electrons
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Lee, I-H., Choi, I. H., Lee, C. R., Shin, E. J., Kim, D., Noh, S. K., ... Lee, H. J. (1998). Stress relaxation in Si-doped GaN studied by Raman spectroscopy. Journal of Applied Physics, 83(11), 5787-5791. https://doi.org/10.1063/1.367501

Stress relaxation in Si-doped GaN studied by Raman spectroscopy. / Lee, In-Hwan; Choi, In Hoon; Lee, Cheul Ro; Shin, Eun Joo; Kim, Dongho; Noh, Sam Kyu; Son, Sung Jin; Lim, Ki Yong; Lee, Hyung Jae.

In: Journal of Applied Physics, Vol. 83, No. 11, 01.06.1998, p. 5787-5791.

Research output: Contribution to journalArticle

Lee, I-H, Choi, IH, Lee, CR, Shin, EJ, Kim, D, Noh, SK, Son, SJ, Lim, KY & Lee, HJ 1998, 'Stress relaxation in Si-doped GaN studied by Raman spectroscopy', Journal of Applied Physics, vol. 83, no. 11, pp. 5787-5791. https://doi.org/10.1063/1.367501
Lee, In-Hwan ; Choi, In Hoon ; Lee, Cheul Ro ; Shin, Eun Joo ; Kim, Dongho ; Noh, Sam Kyu ; Son, Sung Jin ; Lim, Ki Yong ; Lee, Hyung Jae. / Stress relaxation in Si-doped GaN studied by Raman spectroscopy. In: Journal of Applied Physics. 1998 ; Vol. 83, No. 11. pp. 5787-5791.
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