Stretchable field-effect-transistor array of suspended SnO2 nanowires

Gunchul Shin, Chang Hoon Yoon, Min Young Bae, Yoon Chul Kim, Sahng Ki Hong, John A. Rogers, Jeong Sook Ha

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

Stretchable device systems with suspended SnO2 nanowires (NWs) as channel materials: Oxygen plasma is used to remove the underlying polymer to float the NWs. These suspended NW field-effect transistors exhibit high electrical performance. By adopting a neutral mechanical plane and curved interconnection, electrical performance of the suspended NW field-effect transistors is maintained under stretching up to approximately 40%.

Original languageEnglish
Pages (from-to)1181-1185
Number of pages5
JournalSmall
Volume7
Issue number9
DOIs
Publication statusPublished - 2011 May 9

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Keywords

  • field-effect transistors
  • nanotechnology
  • nanowires
  • stretchable devices
  • suspended nanowires

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

Cite this

Shin, G., Yoon, C. H., Bae, M. Y., Kim, Y. C., Hong, S. K., Rogers, J. A., & Ha, J. S. (2011). Stretchable field-effect-transistor array of suspended SnO2 nanowires. Small, 7(9), 1181-1185. https://doi.org/10.1002/smll.201100116