Stretchable photodetector utilizing the change in capacitance formed in a composite film containing semiconductor particles

Sungwoo Jun, Kwang Wook Choi, Kwang Seok Kim, Dae Up Kim, Chan Jae Lee, Chul Jong Han, Cheul Ro Lee, Byeong Kwon Ju, Jong Woong Kim

Research output: Contribution to journalArticle

Abstract

Conventional photodetectors (PDs) are based on measuring photocurrent, which is formed by the separation of electron-hole pairs generated in semiconductors upon light irradiation, through electrodes in direct contact with the semiconductors. Such devices are usually fabricated through complicated and precise processes such as thin film formation by vacuum deposition and fine patterning by photolithography and etching. In addition, PDs have a drawback that the contact quality between the electrode and the semiconductor is easily affected by external stress applied to the device. These issues make it difficult to implement a mechanically flexible device driven by conventional sensing mechanisms. Here we report a simple structured PD based on a semiconductor particle-polymer composite layer surrounded by two facing transparent electrodes, inspired by the fact that the dielectric properties of certain semiconductors change upon light irradiation with a photonic energy greater than or equal to their bandgap. In order to realize this, we synthesized a transparent and stretchable polymer, polyurethane-urea (PUU), which is compatible with Ag nanowires (AgNWs) and polydimethylsiloxane (PDMS) used for implementing stretchable electrodes, and dispersed ZnS:Cu particles into the PUU to form a sensory layer. The fabricated composite surrounded by two facing AgNW-based transparent electrodes was transparent and stretchable, and the capacitance formed at the composite sensitively changed upon irradiation of light with a wavelength of 420 nm and a power of 1.2 mW/cm2 even when the device was stretched or cut in half.

Original languageEnglish
Article number107773
JournalComposites Science and Technology
Volume182
DOIs
Publication statusPublished - 2019 Sep 29

Fingerprint

Composite films
Photodetectors
Capacitance
Semiconductor materials
Electrodes
Polyurethanes
Irradiation
Urea
Nanowires
Polymers
Composite materials
Vacuum deposition
Photolithography
Polydimethylsiloxane
Photocurrents
Dielectric properties
Photonics
Etching
Energy gap
Thin films

Keywords

  • Electrical properties
  • Flexible composites
  • Nanocomposites

ASJC Scopus subject areas

  • Ceramics and Composites
  • Engineering(all)

Cite this

Stretchable photodetector utilizing the change in capacitance formed in a composite film containing semiconductor particles. / Jun, Sungwoo; Choi, Kwang Wook; Kim, Kwang Seok; Kim, Dae Up; Lee, Chan Jae; Han, Chul Jong; Lee, Cheul Ro; Ju, Byeong Kwon; Kim, Jong Woong.

In: Composites Science and Technology, Vol. 182, 107773, 29.09.2019.

Research output: Contribution to journalArticle

Jun, Sungwoo ; Choi, Kwang Wook ; Kim, Kwang Seok ; Kim, Dae Up ; Lee, Chan Jae ; Han, Chul Jong ; Lee, Cheul Ro ; Ju, Byeong Kwon ; Kim, Jong Woong. / Stretchable photodetector utilizing the change in capacitance formed in a composite film containing semiconductor particles. In: Composites Science and Technology. 2019 ; Vol. 182.
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