Strong perpendicular magnetic anisotropy in thick CoFeB films sandwiched by Pd and MgO layers

J. H. Jung; S. H. Lim; S. R. Lee

doi:10.1063/1.3299009

Strong perpendicular magnetic anisotropy in thick CoFeB films sandwiched by Pd and MgO layers

J. H. Jung, S. H. Lim, S. R. Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

A strong perpendicular magnetic anisotropy is formed in unit structures containing a thick CoFeB layer (2 nm) that are suitable for an MgO-based magnetic tunnel junction. The value of the coercivity, measured under perpendicular applied magnetic fields, is as high as 1050 Oe after annealing under optimum conditions. The intermixing between the Pd and the CoFeB and a low saturation magnetization of the Co-rich CoFeB layer are considered to be responsible for the strong perpendicular magnetic anisotropy.

Original language	English
Article number	042503
Journal	Applied Physics Letters
Volume	96
Issue number	4
DOIs	https://doi.org/10.1063/1.3299009
Publication status	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3299009

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abstract = "A strong perpendicular magnetic anisotropy is formed in unit structures containing a thick CoFeB layer (2 nm) that are suitable for an MgO-based magnetic tunnel junction. The value of the coercivity, measured under perpendicular applied magnetic fields, is as high as 1050 Oe after annealing under optimum conditions. The intermixing between the Pd and the CoFeB and a low saturation magnetization of the Co-rich CoFeB layer are considered to be responsible for the strong perpendicular magnetic anisotropy.",

author = "Jung, {J. H.} and Lim, {S. H.} and Lee, {S. R.}",

note = "Funding Information: This work was financially supported by the IT R&D program of MKE/KEIT, through a project “Technology development of 30 nm level high density perpendicular STT-MRAM (2009-F-004-01).”",

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AU - Lim, S. H.

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Y1 - 2010

N2 - A strong perpendicular magnetic anisotropy is formed in unit structures containing a thick CoFeB layer (2 nm) that are suitable for an MgO-based magnetic tunnel junction. The value of the coercivity, measured under perpendicular applied magnetic fields, is as high as 1050 Oe after annealing under optimum conditions. The intermixing between the Pd and the CoFeB and a low saturation magnetization of the Co-rich CoFeB layer are considered to be responsible for the strong perpendicular magnetic anisotropy.

AB - A strong perpendicular magnetic anisotropy is formed in unit structures containing a thick CoFeB layer (2 nm) that are suitable for an MgO-based magnetic tunnel junction. The value of the coercivity, measured under perpendicular applied magnetic fields, is as high as 1050 Oe after annealing under optimum conditions. The intermixing between the Pd and the CoFeB and a low saturation magnetization of the Co-rich CoFeB layer are considered to be responsible for the strong perpendicular magnetic anisotropy.

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Strong perpendicular magnetic anisotropy in thick CoFeB films sandwiched by Pd and MgO layers

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