Structural and electrical anisotropies of Si-doped a-plane (11-20) GaN films with different SiNx interlayers

Ji Hoon Kim, Sung Min Hwang, Yong Gon Seo, Kwang Hyeon Baik, Jung ho Park

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The effects of different SiNx interlayers on the structural and electrical properties of nonpolar Si-doped a-plane (11-20) GaN films grown on r-plane (1-102) sapphire were investigated. The surface roughness depends strongly on the SiNx coverage, deposition temperature and number of SiNx layers. The in-plane anisotropy of on-axis x-ray rocking curves (XRCs) (full width at half-maximum) was significantly decreased by the introduction of multiple SiNx-treated GaN interlayers, indicating coherently scattering domains of uniform size. Off-axis XRC measurements were also employed to investigate the effects on the mosaic twist corresponding to edge dislocation and the I1-type basal-plane stacking fault (BSF) density. Hall effect measurement showed that the electrical conductivity was the highest when multiple SiNx/GaN interlayers were employed. The measured sheet resistances (Rsh) along the c-axis were higher than those along the m-axis. These anisotropic conductivities could be explained by BSFs acting as carrier scattering centers. The ratios of Rsh along the two in-plane orientations also correlated well with the BSF densities.

Original languageEnglish
Article number085007
JournalSemiconductor Science and Technology
Volume28
Issue number8
DOIs
Publication statusPublished - 2013 Aug 1

Fingerprint

Stacking faults
interlayers
Anisotropy
Scattering
X rays
Edge dislocations
anisotropy
Aluminum Oxide
Sheet resistance
Hall effect
Full width at half maximum
Sapphire
crystal defects
Crystal orientation
Structural properties
Electric properties
Surface roughness
edge dislocations
curves
scattering

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Structural and electrical anisotropies of Si-doped a-plane (11-20) GaN films with different SiNx interlayers. / Kim, Ji Hoon; Hwang, Sung Min; Seo, Yong Gon; Baik, Kwang Hyeon; Park, Jung ho.

In: Semiconductor Science and Technology, Vol. 28, No. 8, 085007, 01.08.2013.

Research output: Contribution to journalArticle

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