Abstract
Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonancemetal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nano-polycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 × 10 -3 Ω cm. In our experimental range, the optimized carrier concentration of 3.71 × 10 18 cmr -3 was prepared at the Ga/[O Sn] mole ratio of 0.35.
| Original language | English |
|---|---|
| Pages (from-to) | 7234-7237 |
| Number of pages | 4 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 11 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2011 Aug |
Keywords
- ECR-MOCVD
- Gallium tin oxide
- Structural and electrical properties
- Texture coefficient
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics