Structural and electrical characteristics of gallium tin oxide thin films prepared by electron cyclotron resonance-metal organic chemical vapor deposition

Ji Hun Park, Dongjin Byun, Joong Kee Lee

Research output: Contribution to journalArticlepeer-review

Abstract

Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonancemetal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nano-polycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 × 10 -3 Ω cm. In our experimental range, the optimized carrier concentration of 3.71 × 10 18 cmr -3 was prepared at the Ga/[O Sn] mole ratio of 0.35.

Original languageEnglish
Pages (from-to)7234-7237
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number8
DOIs
Publication statusPublished - 2011 Aug

Keywords

  • ECR-MOCVD
  • Gallium tin oxide
  • Structural and electrical properties
  • Texture coefficient

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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