Structural and electrical characterization of intrinsic n-type In2O3 nanowires

Gunho Jo, Woong Ki Hong, Jongsun Maeng, Tae Wook Kim, Gunuk Wang, Ahnsook Yoon, Soon Shin Kwon, Sunghoon Song, Takhee Lee

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We synthesized high-quality single-crystalline indium oxide nanowires using gold catalytic vapor-liquid-solid growth and characterized their electrical properties with field effect transistor structures. The grown indium oxide nanowires are non-stoichiometric with In:O composition ratio of 1:1.24 due to oxygen vacancies from X-ray photoelectron spectroscopic study. These oxygen vacancies act as donors in indium oxide nanowires. The field effect transistors based on these nanowires exhibited good transistor characteristics with well-defined linear and saturation regions with on/off ratios as high as 3 × 104 at drain bias 0.1 V, electron carrier density of 3.7 × 1017 cm-3 and an electron mobility of 85 cm2/V s.

Original languageEnglish
Pages (from-to)308-311
Number of pages4
JournalColloids and Surfaces A: Physicochemical and Engineering Aspects
Volume313-314
DOIs
Publication statusPublished - 2008 Feb 1
Externally publishedYes

Keywords

  • Field effect transistor
  • Indium oxide
  • Nanoelectronics
  • Nanowire

ASJC Scopus subject areas

  • Surfaces and Interfaces
  • Physical and Theoretical Chemistry
  • Colloid and Surface Chemistry

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