Structural and electrical properties of (1-x)Bi5Nb3O15-xBi4Ti3O12 ceramics and 0.96Bi5Nb3O15-0.04Bi4Ti3O12 thin films grown by pulsed laser deposition

Myung Eun Song, Tae Geun Seong, Jin Seong Kim, Kyung Hoon Cho, Jong Woo Sun, Sahn Nahm

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


A 0.96Bi5Nb3O15-0.04Bi4Ti3O12 (0.96B5N3-0.04B4T3) ceramic showed a high dielectric constant (k) of 314, probably due to the increased dipole moment caused by the replacement of Nb5+ ions by Ti4+ ions. The 0.96B5N3-0.04B4T3 films were well formed on the Pt/Ti/SiO2/Si substrate. Films grown at temperatures lower than 400°C had an amorphous phase but small Bi3NbO7 crystals were considered to have been formed in these films. The film grown at 300°C exhibited a high k value of 83 with a low dielectric loss of 0.5%. The leakage current density of the film grown at low oxygen pressure (OP) was high and decreased with increasing OP to a minimum at an OP of 200 mTorr, after which it increased with further increase in OP. This variation of the leakage current density with OP was explained by the existence of oxygen vacancies and interstitial oxygen ions in the film. The 0.96B5N3-0.04B4T3 film grown under 200 mTorr OP exhibited a high k value of 83, a low leakage current density of 8 × 10-8A/cm2 at 0.3MV/cm and a high breakdown field of 0.4MV/cm.

Original languageEnglish
Pages (from-to)23-27
Number of pages5
JournalElectronic Materials Letters
Issue number1
Publication statusPublished - 2009 Mar


  • 0.96BiNbO-0.04BiTiO film
  • Dielectric constant
  • Low process temperature
  • Oxygen pressure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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