Structural and electrical properties of Bi2O3-Nb 2O5 thin films grown at low temperatures by pulsed laser deposition

Jong Woo Sun, Lee Seung Kang, Jin Seong Kim, Mi Ri Joung, Sahn Nahm, Tae Geun Seong, Chong Yun Kang, Jong Hee Kim

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The dielectric constant (r) of the films grown at 100 °C increased as the beam energy density increased and a saturated value of 80 was obtained for the film grown under 6.0 J cm-2. The larger r value was attributed to the increased amount of nano-sized Bi 3NbO7 crystals. The r values also increased with the beam energy density for films grown at 300 °C and a very high r value of 135.6 with a low loss of 3.0% at 100 kHz was obtained for the film grown at 300 °C under a beam density of 3.0 J cm-2. The crystalline BiNbO4 phase developed, but the amount of Bi 3NbO7 crystals decreased as the beam energy density increased, indicating that the increased r values of the films grown at 300 °C could be due to the formation of the crystalline BiNbO4 phase. The electrical properties of the films grown at 300 °C under a beam density of 3.0 J cm-2 were considerably influenced by the oxygen partial pressure (OPP) during annealing. The film annealed at 300 °C under a 50.0 torr OPP exhibited a low leakage current density of 5.4 × 10 -9 A cm-2 at 0.3 MV cm-1 with a relatively high breakdown field of 0.4 MV cm-1.

Original languageEnglish
Pages (from-to)5434-5439
Number of pages6
JournalActa Materialia
Volume59
Issue number14
DOIs
Publication statusPublished - 2011 Aug

Keywords

  • Dielectrics
  • Laser deposition
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

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