Structural and electrical properties of Bi2O3-Nb 2O5 thin films grown at low temperatures by pulsed laser deposition

Jong Woo Sun, Lee Seung Kang, Jin Seong Kim, Mi Ri Joung, Sahn Nahm, Tae Geun Seong, Chong-Yun Kang, Jong Hee Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The dielectric constant (r) of the films grown at 100 °C increased as the beam energy density increased and a saturated value of 80 was obtained for the film grown under 6.0 J cm-2. The larger r value was attributed to the increased amount of nano-sized Bi 3NbO7 crystals. The r values also increased with the beam energy density for films grown at 300 °C and a very high r value of 135.6 with a low loss of 3.0% at 100 kHz was obtained for the film grown at 300 °C under a beam density of 3.0 J cm-2. The crystalline BiNbO4 phase developed, but the amount of Bi 3NbO7 crystals decreased as the beam energy density increased, indicating that the increased r values of the films grown at 300 °C could be due to the formation of the crystalline BiNbO4 phase. The electrical properties of the films grown at 300 °C under a beam density of 3.0 J cm-2 were considerably influenced by the oxygen partial pressure (OPP) during annealing. The film annealed at 300 °C under a 50.0 torr OPP exhibited a low leakage current density of 5.4 × 10 -9 A cm-2 at 0.3 MV cm-1 with a relatively high breakdown field of 0.4 MV cm-1.

Original languageEnglish
Pages (from-to)5434-5439
Number of pages6
JournalActa Materialia
Volume59
Issue number14
DOIs
Publication statusPublished - 2011 Aug 1

Fingerprint

Pulsed laser deposition
Structural properties
Electric properties
Thin films
Temperature
Partial pressure
Oxygen
Crystalline materials
Crystals
Leakage currents
Permittivity
Current density
Annealing

Keywords

  • Dielectrics
  • Laser deposition
  • Thin films

ASJC Scopus subject areas

  • Ceramics and Composites
  • Metals and Alloys
  • Polymers and Plastics
  • Electronic, Optical and Magnetic Materials

Cite this

Structural and electrical properties of Bi2O3-Nb 2O5 thin films grown at low temperatures by pulsed laser deposition. / Sun, Jong Woo; Kang, Lee Seung; Kim, Jin Seong; Joung, Mi Ri; Nahm, Sahn; Seong, Tae Geun; Kang, Chong-Yun; Kim, Jong Hee.

In: Acta Materialia, Vol. 59, No. 14, 01.08.2011, p. 5434-5439.

Research output: Contribution to journalArticle

Sun, Jong Woo ; Kang, Lee Seung ; Kim, Jin Seong ; Joung, Mi Ri ; Nahm, Sahn ; Seong, Tae Geun ; Kang, Chong-Yun ; Kim, Jong Hee. / Structural and electrical properties of Bi2O3-Nb 2O5 thin films grown at low temperatures by pulsed laser deposition. In: Acta Materialia. 2011 ; Vol. 59, No. 14. pp. 5434-5439.
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