Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In xAl 1-xSb continuously graded buffer

Sang Hoon Shin, Jin Dong Song, Ju Young Lim, Hyun Cheol Koo, Tae Geun Kim

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High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

Original languageEnglish
Pages (from-to)2927-2930
Number of pages4
JournalMaterials Research Bulletin
Issue number10
Publication statusPublished - 2012 Oct 1



  • A. Semiconductors
  • A. Thin films
  • B. Epitaxial growth
  • D. Defects
  • D. Electrical properties

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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