Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In xAl 1-xSb continuously graded buffer

Sang Hoon Shin; Jin Dong Song; Ju Young Lim; Hyun Cheol Koo; Tae Geun Kim

doi:10.1016/j.materresbull.2012.04.121

Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In _xAl _1-xSb continuously graded buffer

Sang Hoon Shin, Jin Dong Song, Ju Young Lim, Hyun Cheol Koo, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm ²/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

Original language	English
Pages (from-to)	2927-2930
Number of pages	4
Journal	Materials Research Bulletin
Volume	47
Issue number	10
DOIs	https://doi.org/10.1016/j.materresbull.2012.04.121
Publication status	Published - 2012 Oct

Keywords

A. Semiconductors
A. Thin films
B. Epitaxial growth
D. Defects
D. Electrical properties

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.materresbull.2012.04.121

Cite this

@article{3a9bc66de0454242bca0ef9fcd37e927,

title = "Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In xAl 1-xSb continuously graded buffer",

abstract = "High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.",

keywords = "A. Semiconductors, A. Thin films, B. Epitaxial growth, D. Defects, D. Electrical properties",

author = "Shin, {Sang Hoon} and Song, {Jin Dong} and Lim, {Ju Young} and Koo, {Hyun Cheol} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported mainly by KIST Institutional Programs including Dream Project and partially by NRF grant funded by MEST (No. 2011-0016471 ). Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2012",

month = oct,

doi = "10.1016/j.materresbull.2012.04.121",

language = "English",

volume = "47",

pages = "2927--2930",

journal = "Materials Research Bulletin",

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T1 - Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In xAl 1-xSb continuously graded buffer

AU - Shin, Sang Hoon

AU - Song, Jin Dong

AU - Lim, Ju Young

AU - Koo, Hyun Cheol

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported mainly by KIST Institutional Programs including Dream Project and partially by NRF grant funded by MEST (No. 2011-0016471 ). Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2012/10

Y1 - 2012/10

N2 - High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

AB - High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

KW - A. Semiconductors

KW - A. Thin films

KW - B. Epitaxial growth

KW - D. Defects

KW - D. Electrical properties

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