Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In xAl 1-xSb continuously graded buffer

Sang Hoon Shin, Jin Dong Song, Ju Young Lim, Hyun Cheol Koo, Tae Geun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

Original languageEnglish
Pages (from-to)2927-2930
Number of pages4
JournalMaterials Research Bulletin
Volume47
Issue number10
DOIs
Publication statusPublished - 2012 Oct 1

Fingerprint

Electron mobility
Thick films
thick films
Structural properties
Buffers
Electric properties
buffers
electrical properties
electron mobility
Lattice mismatch
Substrates
Transmission electron microscopy
Defects
transmission electron microscopy
cross sections
defects
cells
Temperature
gallium arsenide
temperature

Keywords

  • A. Semiconductors
  • A. Thin films
  • B. Epitaxial growth
  • D. Defects
  • D. Electrical properties

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In xAl 1-xSb continuously graded buffer. / Shin, Sang Hoon; Song, Jin Dong; Lim, Ju Young; Koo, Hyun Cheol; Kim, Tae Geun.

In: Materials Research Bulletin, Vol. 47, No. 10, 01.10.2012, p. 2927-2930.

Research output: Contribution to journalArticle

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