Structural and electrical properties of KNbO3 thin film grown on a Pt/Ti/SiO2/Si substrate using the RF magnetron sputtering method

Tae Ho Lee, Dae Hyeon Kim, Bo Yun Kim, Hye Yoon Choi, Joon Hak Oh, Chong Yun Kang, Sahn Nahm

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


A homogeneous KNbO3 (KN) thin film was grown on a Pt/Ti/SiO2/Si substrate using the RF sputtering method. A K2.88Nb5O15 secondary phase was formed in the KN film when the deposition and the annealing temperatures were greater than room temperature (RT) and 800°C, respectively, owing to the evaporation of K2O. On the other hand, KNb3O8 and K3Nb5.45O15 secondary phases were formed in the KN films when the annealing temperature was less than 800°C or the annealing time at 800°C was shorter than 90 min. A homogeneous KN thin film was formed when it was deposited at RT and subsequently annealed at 800°C for 90 min under the K2O atmosphere. This KN film exhibits a relative permittivity of 884 with a dissipation factor of 6.71% at 100 kHz. The leakage current density of 1.06 × 10-6 A/cm2 at 0.1 MV/cm and a breakdown field of 1.5 MV/cm were observed from this film. This film showed a saturation polarization of 21.9 μC/cm2, with a remnant polarization of 8.3 μC/cm2, and a piezoelectric strain constant of 125 pm/V.

Original languageEnglish
Pages (from-to)53-58
Number of pages6
JournalActa Materialia
Publication statusPublished - 2016 Jun 15


  • KN thin film
  • Lead-free
  • Piezoelectricity
  • Sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys


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