Structural and electrical properties of KNbO3 thin film grown on a Pt/Ti/SiO2/Si substrate using the RF magnetron sputtering method

Tae Ho Lee, Dae Hyeon Kim, Bo Yun Kim, Hye Yoon Choi, Joon Hak Oh, Chong-Yun Kang, Sahn Nahm

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A homogeneous KNbO3 (KN) thin film was grown on a Pt/Ti/SiO2/Si substrate using the RF sputtering method. A K2.88Nb5O15 secondary phase was formed in the KN film when the deposition and the annealing temperatures were greater than room temperature (RT) and 800°C, respectively, owing to the evaporation of K2O. On the other hand, KNb3O8 and K3Nb5.45O15 secondary phases were formed in the KN films when the annealing temperature was less than 800°C or the annealing time at 800°C was shorter than 90 min. A homogeneous KN thin film was formed when it was deposited at RT and subsequently annealed at 800°C for 90 min under the K2O atmosphere. This KN film exhibits a relative permittivity of 884 with a dissipation factor of 6.71% at 100 kHz. The leakage current density of 1.06 × 10-6 A/cm2 at 0.1 MV/cm and a breakdown field of 1.5 MV/cm were observed from this film. This film showed a saturation polarization of 21.9 μC/cm2, with a remnant polarization of 8.3 μC/cm2, and a piezoelectric strain constant of 125 pm/V.

Original languageEnglish
Pages (from-to)53-58
Number of pages6
JournalActa Materialia
Volume112
DOIs
Publication statusPublished - 2016 Jun 15

Fingerprint

Magnetron sputtering
Structural properties
Electric properties
Thin films
Substrates
Annealing
Polarization
Temperature
Leakage currents
Sputtering
Evaporation
Permittivity
Current density

Keywords

  • KN thin film
  • Lead-free
  • Piezoelectricity
  • Sputtering

ASJC Scopus subject areas

  • Ceramics and Composites
  • Metals and Alloys
  • Polymers and Plastics
  • Electronic, Optical and Magnetic Materials

Cite this

Structural and electrical properties of KNbO3 thin film grown on a Pt/Ti/SiO2/Si substrate using the RF magnetron sputtering method. / Lee, Tae Ho; Kim, Dae Hyeon; Kim, Bo Yun; Choi, Hye Yoon; Oh, Joon Hak; Kang, Chong-Yun; Nahm, Sahn.

In: Acta Materialia, Vol. 112, 15.06.2016, p. 53-58.

Research output: Contribution to journalArticle

Lee, Tae Ho ; Kim, Dae Hyeon ; Kim, Bo Yun ; Choi, Hye Yoon ; Oh, Joon Hak ; Kang, Chong-Yun ; Nahm, Sahn. / Structural and electrical properties of KNbO3 thin film grown on a Pt/Ti/SiO2/Si substrate using the RF magnetron sputtering method. In: Acta Materialia. 2016 ; Vol. 112. pp. 53-58.
@article{edf0304d331d447984b54a7a327abb3b,
title = "Structural and electrical properties of KNbO3 thin film grown on a Pt/Ti/SiO2/Si substrate using the RF magnetron sputtering method",
abstract = "A homogeneous KNbO3 (KN) thin film was grown on a Pt/Ti/SiO2/Si substrate using the RF sputtering method. A K2.88Nb5O15 secondary phase was formed in the KN film when the deposition and the annealing temperatures were greater than room temperature (RT) and 800°C, respectively, owing to the evaporation of K2O. On the other hand, KNb3O8 and K3Nb5.45O15 secondary phases were formed in the KN films when the annealing temperature was less than 800°C or the annealing time at 800°C was shorter than 90 min. A homogeneous KN thin film was formed when it was deposited at RT and subsequently annealed at 800°C for 90 min under the K2O atmosphere. This KN film exhibits a relative permittivity of 884 with a dissipation factor of 6.71{\%} at 100 kHz. The leakage current density of 1.06 × 10-6 A/cm2 at 0.1 MV/cm and a breakdown field of 1.5 MV/cm were observed from this film. This film showed a saturation polarization of 21.9 μC/cm2, with a remnant polarization of 8.3 μC/cm2, and a piezoelectric strain constant of 125 pm/V.",
keywords = "KN thin film, Lead-free, Piezoelectricity, Sputtering",
author = "Lee, {Tae Ho} and Kim, {Dae Hyeon} and Kim, {Bo Yun} and Choi, {Hye Yoon} and Oh, {Joon Hak} and Chong-Yun Kang and Sahn Nahm",
year = "2016",
month = "6",
day = "15",
doi = "10.1016/j.actamat.2016.04.024",
language = "English",
volume = "112",
pages = "53--58",
journal = "Acta Materialia",
issn = "1359-6454",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Structural and electrical properties of KNbO3 thin film grown on a Pt/Ti/SiO2/Si substrate using the RF magnetron sputtering method

AU - Lee, Tae Ho

AU - Kim, Dae Hyeon

AU - Kim, Bo Yun

AU - Choi, Hye Yoon

AU - Oh, Joon Hak

AU - Kang, Chong-Yun

AU - Nahm, Sahn

PY - 2016/6/15

Y1 - 2016/6/15

N2 - A homogeneous KNbO3 (KN) thin film was grown on a Pt/Ti/SiO2/Si substrate using the RF sputtering method. A K2.88Nb5O15 secondary phase was formed in the KN film when the deposition and the annealing temperatures were greater than room temperature (RT) and 800°C, respectively, owing to the evaporation of K2O. On the other hand, KNb3O8 and K3Nb5.45O15 secondary phases were formed in the KN films when the annealing temperature was less than 800°C or the annealing time at 800°C was shorter than 90 min. A homogeneous KN thin film was formed when it was deposited at RT and subsequently annealed at 800°C for 90 min under the K2O atmosphere. This KN film exhibits a relative permittivity of 884 with a dissipation factor of 6.71% at 100 kHz. The leakage current density of 1.06 × 10-6 A/cm2 at 0.1 MV/cm and a breakdown field of 1.5 MV/cm were observed from this film. This film showed a saturation polarization of 21.9 μC/cm2, with a remnant polarization of 8.3 μC/cm2, and a piezoelectric strain constant of 125 pm/V.

AB - A homogeneous KNbO3 (KN) thin film was grown on a Pt/Ti/SiO2/Si substrate using the RF sputtering method. A K2.88Nb5O15 secondary phase was formed in the KN film when the deposition and the annealing temperatures were greater than room temperature (RT) and 800°C, respectively, owing to the evaporation of K2O. On the other hand, KNb3O8 and K3Nb5.45O15 secondary phases were formed in the KN films when the annealing temperature was less than 800°C or the annealing time at 800°C was shorter than 90 min. A homogeneous KN thin film was formed when it was deposited at RT and subsequently annealed at 800°C for 90 min under the K2O atmosphere. This KN film exhibits a relative permittivity of 884 with a dissipation factor of 6.71% at 100 kHz. The leakage current density of 1.06 × 10-6 A/cm2 at 0.1 MV/cm and a breakdown field of 1.5 MV/cm were observed from this film. This film showed a saturation polarization of 21.9 μC/cm2, with a remnant polarization of 8.3 μC/cm2, and a piezoelectric strain constant of 125 pm/V.

KW - KN thin film

KW - Lead-free

KW - Piezoelectricity

KW - Sputtering

UR - http://www.scopus.com/inward/record.url?scp=84963614708&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84963614708&partnerID=8YFLogxK

U2 - 10.1016/j.actamat.2016.04.024

DO - 10.1016/j.actamat.2016.04.024

M3 - Article

VL - 112

SP - 53

EP - 58

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

ER -