Structural and electrical properties of Mn-doped Bi4 Ti3O12 thin film grown on SiO2/Si substrate for RF MIM capacitors

Joo Young Choi, Lee Seung Kang, Kyung Hoon Cho, Tae Geun Seong, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Jong Hee Kim

Research output: Contribution to journalArticlepeer-review


Mn-doped Bi4Ti3O12 (M-B4 T3) films were well formed on a TiN/SiO2/Si substrate at 200 °C without buckling using RF magnetron sputtering. The leakage current density of these films was considerably influenced by the oxygen partial pressure (OPP), which was attributed to the presence of oxygen vacancies or oxygen interstitial ions. The film grown under 2.8-mtorr OPP showed the lowest leakage current density. The M-B4T3 films grown at 200 °C showed a high dielectric constant of 38 with a low loss in both kilohertz and gigahertz ranges. The 39-nm-thick film showed a high capacitance density of 8.47/μ2 at 100 kHz, and its temperature and quadratic voltage coefficients of capacitance were low at approximately 370 ppm/ ° C and 667 ppm/V2, respectively, with a low leakage current density of 7.8 × 10-8A/cm2 at 2 V. Therefore, the M-B4T3 thin film grown on a TiN/ SiO2/Si substrate is a good candidate material for high performance, radio frequency metal-insulator-metal capacitors.

Original languageEnglish
Pages (from-to)1631-1636
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number8
Publication statusPublished - 2009


  • BiTiO
  • High-κ
  • Metal-insulator-metal (MIM) capacitor
  • Temperature coefficient of capacitance (TCC)
  • Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Structural and electrical properties of Mn-doped Bi<sub>4</sub> Ti<sub>3</sub>O<sub>12</sub> thin film grown on SiO<sub>2</sub>/Si substrate for RF MIM capacitors'. Together they form a unique fingerprint.

Cite this