Structural and electrical properties of Mn-doped Bi4 Ti3O12 thin film grown on SiO2/Si substrate for RF MIM capacitors

Joo Young Choi, Lee Seung Kang, Kyung Hoon Cho, Tae Geun Seong, Sahn Nahm, Chong-Yun Kang, Seok Jin Yoon, Jong Hee Kim

Research output: Contribution to journalArticle

Abstract

Mn-doped Bi4Ti3O12 (M-B4 T3) films were well formed on a TiN/SiO2/Si substrate at 200 °C without buckling using RF magnetron sputtering. The leakage current density of these films was considerably influenced by the oxygen partial pressure (OPP), which was attributed to the presence of oxygen vacancies or oxygen interstitial ions. The film grown under 2.8-mtorr OPP showed the lowest leakage current density. The M-B4T3 films grown at 200 °C showed a high dielectric constant of 38 with a low loss in both kilohertz and gigahertz ranges. The 39-nm-thick film showed a high capacitance density of 8.47/μ2 at 100 kHz, and its temperature and quadratic voltage coefficients of capacitance were low at approximately 370 ppm/ ° C and 667 ppm/V2, respectively, with a low leakage current density of 7.8 × 10-8A/cm2 at 2 V. Therefore, the M-B4T3 thin film grown on a TiN/ SiO2/Si substrate is a good candidate material for high performance, radio frequency metal-insulator-metal capacitors.

Original languageEnglish
Pages (from-to)1631-1636
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume56
Issue number8
DOIs
Publication statusPublished - 2009 Jun 26

Fingerprint

Structural properties
Electric properties
Capacitors
Leakage currents
Thin films
Current density
Substrates
Oxygen
Partial pressure
Capacitance
Metals
Oxygen vacancies
Thick films
Magnetron sputtering
Buckling
Permittivity
Ions
Electric potential
Temperature

Keywords

  • BiTiO
  • High-κ
  • Metal-insulator-metal (MIM) capacitor
  • Temperature coefficient of capacitance (TCC)
  • Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Structural and electrical properties of Mn-doped Bi4 Ti3O12 thin film grown on SiO2/Si substrate for RF MIM capacitors. / Choi, Joo Young; Kang, Lee Seung; Cho, Kyung Hoon; Seong, Tae Geun; Nahm, Sahn; Kang, Chong-Yun; Yoon, Seok Jin; Kim, Jong Hee.

In: IEEE Transactions on Electron Devices, Vol. 56, No. 8, 26.06.2009, p. 1631-1636.

Research output: Contribution to journalArticle

Choi, Joo Young ; Kang, Lee Seung ; Cho, Kyung Hoon ; Seong, Tae Geun ; Nahm, Sahn ; Kang, Chong-Yun ; Yoon, Seok Jin ; Kim, Jong Hee. / Structural and electrical properties of Mn-doped Bi4 Ti3O12 thin film grown on SiO2/Si substrate for RF MIM capacitors. In: IEEE Transactions on Electron Devices. 2009 ; Vol. 56, No. 8. pp. 1631-1636.
@article{a7a40fa7124e4613a7cfc0757c48f9ec,
title = "Structural and electrical properties of Mn-doped Bi4 Ti3O12 thin film grown on SiO2/Si substrate for RF MIM capacitors",
abstract = "Mn-doped Bi4Ti3O12 (M-B4 T3) films were well formed on a TiN/SiO2/Si substrate at 200 °C without buckling using RF magnetron sputtering. The leakage current density of these films was considerably influenced by the oxygen partial pressure (OPP), which was attributed to the presence of oxygen vacancies or oxygen interstitial ions. The film grown under 2.8-mtorr OPP showed the lowest leakage current density. The M-B4T3 films grown at 200 °C showed a high dielectric constant of 38 with a low loss in both kilohertz and gigahertz ranges. The 39-nm-thick film showed a high capacitance density of 8.47/μ2 at 100 kHz, and its temperature and quadratic voltage coefficients of capacitance were low at approximately 370 ppm/ ° C and 667 ppm/V2, respectively, with a low leakage current density of 7.8 × 10-8A/cm2 at 2 V. Therefore, the M-B4T3 thin film grown on a TiN/ SiO2/Si substrate is a good candidate material for high performance, radio frequency metal-insulator-metal capacitors.",
keywords = "BiTiO, High-κ, Metal-insulator-metal (MIM) capacitor, Temperature coefficient of capacitance (TCC), Voltage coefficient of capacitance (VCC)",
author = "Choi, {Joo Young} and Kang, {Lee Seung} and Cho, {Kyung Hoon} and Seong, {Tae Geun} and Sahn Nahm and Chong-Yun Kang and Yoon, {Seok Jin} and Kim, {Jong Hee}",
year = "2009",
month = "6",
day = "26",
doi = "10.1109/TED.2009.2022892",
language = "English",
volume = "56",
pages = "1631--1636",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

TY - JOUR

T1 - Structural and electrical properties of Mn-doped Bi4 Ti3O12 thin film grown on SiO2/Si substrate for RF MIM capacitors

AU - Choi, Joo Young

AU - Kang, Lee Seung

AU - Cho, Kyung Hoon

AU - Seong, Tae Geun

AU - Nahm, Sahn

AU - Kang, Chong-Yun

AU - Yoon, Seok Jin

AU - Kim, Jong Hee

PY - 2009/6/26

Y1 - 2009/6/26

N2 - Mn-doped Bi4Ti3O12 (M-B4 T3) films were well formed on a TiN/SiO2/Si substrate at 200 °C without buckling using RF magnetron sputtering. The leakage current density of these films was considerably influenced by the oxygen partial pressure (OPP), which was attributed to the presence of oxygen vacancies or oxygen interstitial ions. The film grown under 2.8-mtorr OPP showed the lowest leakage current density. The M-B4T3 films grown at 200 °C showed a high dielectric constant of 38 with a low loss in both kilohertz and gigahertz ranges. The 39-nm-thick film showed a high capacitance density of 8.47/μ2 at 100 kHz, and its temperature and quadratic voltage coefficients of capacitance were low at approximately 370 ppm/ ° C and 667 ppm/V2, respectively, with a low leakage current density of 7.8 × 10-8A/cm2 at 2 V. Therefore, the M-B4T3 thin film grown on a TiN/ SiO2/Si substrate is a good candidate material for high performance, radio frequency metal-insulator-metal capacitors.

AB - Mn-doped Bi4Ti3O12 (M-B4 T3) films were well formed on a TiN/SiO2/Si substrate at 200 °C without buckling using RF magnetron sputtering. The leakage current density of these films was considerably influenced by the oxygen partial pressure (OPP), which was attributed to the presence of oxygen vacancies or oxygen interstitial ions. The film grown under 2.8-mtorr OPP showed the lowest leakage current density. The M-B4T3 films grown at 200 °C showed a high dielectric constant of 38 with a low loss in both kilohertz and gigahertz ranges. The 39-nm-thick film showed a high capacitance density of 8.47/μ2 at 100 kHz, and its temperature and quadratic voltage coefficients of capacitance were low at approximately 370 ppm/ ° C and 667 ppm/V2, respectively, with a low leakage current density of 7.8 × 10-8A/cm2 at 2 V. Therefore, the M-B4T3 thin film grown on a TiN/ SiO2/Si substrate is a good candidate material for high performance, radio frequency metal-insulator-metal capacitors.

KW - BiTiO

KW - High-κ

KW - Metal-insulator-metal (MIM) capacitor

KW - Temperature coefficient of capacitance (TCC)

KW - Voltage coefficient of capacitance (VCC)

UR - http://www.scopus.com/inward/record.url?scp=68349152790&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68349152790&partnerID=8YFLogxK

U2 - 10.1109/TED.2009.2022892

DO - 10.1109/TED.2009.2022892

M3 - Article

AN - SCOPUS:68349152790

VL - 56

SP - 1631

EP - 1636

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 8

ER -