Structural and electrical properties of (Zr,Ti)0.85(Ca,Sr)0.15O1.85 thin films grown on Cu/Ti/SiO2/Si substrate using RF magnetron sputtering

Mir Im, Tae Ho Lee, Sang Hyo Kweon, Chong Yun Kang, Sahn Nahm

Research output: Contribution to journalArticle

Abstract

(Zr,Ti)0.85(Ca,Sr)0.15O1.85 (ZTCS) films grown on Cu electrode at room temperature showed a crystalline cubic stabilized ZrO2 structure when large sputtering powers (≥ 75 W) were used. The smoothest film, grown at sputtering power of 75 W, showed the lowest leakage current (4.0 × 10−6 A/cm2 at 0.75 MV/cm) and highest breakdown voltage (2.7 MV/cm) among all the films prepared, indicating that surface roughness considerably influences the electrical properties of the ZTCS film. A dielectric constant (k) of 21.5 and a tan δ of 0.007 were obtained at 100 kHz, and a similar k of 19.4 with a high quality factor of 52 at 2.0 GHz. Moreover, a high capacitance density (78 nF/cm2) and a small TCC (256 ppm/oC at 100 kHz) were obtained. Such a ZTCS film therefore satisfies the requirements of the International Technology Roadmap for Semiconductors for capacitors grown on organic substrates for 2016.

Original languageEnglish
Pages (from-to)717-721
Number of pages5
JournalJournal of Ceramic Processing Research
Volume17
Issue number7
Publication statusPublished - 2016

Fingerprint

Magnetron sputtering
Structural properties
Electric properties
Thin films
Substrates
Sputtering
Electric breakdown
Leakage currents
Capacitors
Permittivity
Capacitance
Surface roughness
Semiconductor materials
Crystalline materials
Electrodes
Temperature

Keywords

  • Dielectric
  • Embedded capacitor
  • Thin film

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Structural and electrical properties of (Zr,Ti)0.85(Ca,Sr)0.15O1.85 thin films grown on Cu/Ti/SiO2/Si substrate using RF magnetron sputtering. / Im, Mir; Lee, Tae Ho; Kweon, Sang Hyo; Kang, Chong Yun; Nahm, Sahn.

In: Journal of Ceramic Processing Research, Vol. 17, No. 7, 2016, p. 717-721.

Research output: Contribution to journalArticle

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T1 - Structural and electrical properties of (Zr,Ti)0.85(Ca,Sr)0.15O1.85 thin films grown on Cu/Ti/SiO2/Si substrate using RF magnetron sputtering

AU - Im, Mir

AU - Lee, Tae Ho

AU - Kweon, Sang Hyo

AU - Kang, Chong Yun

AU - Nahm, Sahn

PY - 2016

Y1 - 2016

N2 - (Zr,Ti)0.85(Ca,Sr)0.15O1.85 (ZTCS) films grown on Cu electrode at room temperature showed a crystalline cubic stabilized ZrO2 structure when large sputtering powers (≥ 75 W) were used. The smoothest film, grown at sputtering power of 75 W, showed the lowest leakage current (4.0 × 10−6 A/cm2 at 0.75 MV/cm) and highest breakdown voltage (2.7 MV/cm) among all the films prepared, indicating that surface roughness considerably influences the electrical properties of the ZTCS film. A dielectric constant (k) of 21.5 and a tan δ of 0.007 were obtained at 100 kHz, and a similar k of 19.4 with a high quality factor of 52 at 2.0 GHz. Moreover, a high capacitance density (78 nF/cm2) and a small TCC (256 ppm/oC at 100 kHz) were obtained. Such a ZTCS film therefore satisfies the requirements of the International Technology Roadmap for Semiconductors for capacitors grown on organic substrates for 2016.

AB - (Zr,Ti)0.85(Ca,Sr)0.15O1.85 (ZTCS) films grown on Cu electrode at room temperature showed a crystalline cubic stabilized ZrO2 structure when large sputtering powers (≥ 75 W) were used. The smoothest film, grown at sputtering power of 75 W, showed the lowest leakage current (4.0 × 10−6 A/cm2 at 0.75 MV/cm) and highest breakdown voltage (2.7 MV/cm) among all the films prepared, indicating that surface roughness considerably influences the electrical properties of the ZTCS film. A dielectric constant (k) of 21.5 and a tan δ of 0.007 were obtained at 100 kHz, and a similar k of 19.4 with a high quality factor of 52 at 2.0 GHz. Moreover, a high capacitance density (78 nF/cm2) and a small TCC (256 ppm/oC at 100 kHz) were obtained. Such a ZTCS film therefore satisfies the requirements of the International Technology Roadmap for Semiconductors for capacitors grown on organic substrates for 2016.

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