Structural and electronic properties of amorphous and polycrystalline In2Se3 films

A. Chaiken, K. Nauka, G. A. Gibson, Heon Lee, C. C. Yang, J. Wu, J. W. Ager, K. M. Yu, W. Walukiewicz

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Abstract

Structural and electronic properties of amorphous and polycrystalline In2Se3 films were discussed. The effect of deposition conditions on the film phase was also studied. It was found that the increased resistivity of amorphous In2Se3 films is due to replacement of In-In bonds with In-Se bonds during crystallization.

Original languageEnglish
Pages (from-to)2390-2397
Number of pages8
JournalJournal of Applied Physics
Volume94
Issue number4
DOIs
Publication statusPublished - 2003 Aug 15
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Chaiken, A., Nauka, K., Gibson, G. A., Lee, H., Yang, C. C., Wu, J., ... Walukiewicz, W. (2003). Structural and electronic properties of amorphous and polycrystalline In2Se3 films. Journal of Applied Physics, 94(4), 2390-2397. https://doi.org/10.1063/1.1592631