Structural and electronic properties of amorphous and polycrystalline In2Se3 films were discussed. The effect of deposition conditions on the film phase was also studied. It was found that the increased resistivity of amorphous In2Se3 films is due to replacement of In-In bonds with In-Se bonds during crystallization.
|Number of pages||8|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2003 Aug 15|
ASJC Scopus subject areas
- Physics and Astronomy(all)