Structural and optical properties of as-synthesized, Ga2O 3-coated, and Al2O3-coated GaN nanowires

Myungil Kang, Jong Soo Lee, Sung Kyu Sim, Byungdon Min, Kyoungah Cho, Hyunsuk Kim, Man Young Sung, Sangsig Kim, Se Ahn Song, Moon Sook Lee

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16 Citations (Scopus)

Abstract

Structural and optical properties of as-synthesized, Ga2O 3-coated, and Al2O3-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH3 atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2 nm-thick Ga2O 3 layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al2O3 by atomic layer deposition technique. Our study suggests that the Al2O3-coating passivates some of surface states in the GaN nanowires.

Original languageEnglish
Pages (from-to)265-271
Number of pages7
JournalThin Solid Films
Volume466
Issue number1-2
DOIs
Publication statusPublished - 2004 Nov 1

Keywords

  • Coatings
  • GaN nanowires
  • Optical properties
  • Oxidation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Kang, M., Lee, J. S., Sim, S. K., Min, B., Cho, K., Kim, H., Sung, M. Y., Kim, S., Song, S. A., & Lee, M. S. (2004). Structural and optical properties of as-synthesized, Ga2O 3-coated, and Al2O3-coated GaN nanowires. Thin Solid Films, 466(1-2), 265-271. https://doi.org/10.1016/j.tsf.2004.02.025