### Abstract

The structural and optical properties of lateral composition modulation (LCM) in (InP)
_{n}/(GaP)
_{n} short-period superlattice grown by molecular beam epitaxy were studied with transmission electron microscopy (TEM) and photoluminescence (PL) at the growth temperature (T
_{g}) of 425 and 490 for n = 1, 1.7, and 2. LCM occurs only in a [1 -1 0] direction at T
_{g} = 490 °C for n = 1 and 2. On the contrary, LCM occurs both in [1 -1 0] and [1 1 0] directions, parallel to [1 0 0] direction, at T
_{g} ≥ 425 °C for n = 1.7. This is due to the stronger induction of LCM in tensile strain (∼ -10% for n = 1.7) than in compressive strain (∼ 6% for n = 1 and 2). The 9 K-PL measurements show that the LCM experiences the reduction of bandgap up to ∼ 345 meV as both n and T
_{g} increase. This is the best data ever reported so far. The origin of bandgap shrinkage is mainly attributed to LCM along with the contribution of CuPt-type ordering.

Original language | English |
---|---|

Title of host publication | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |

Pages | 549-551 |

Number of pages | 3 |

Publication status | Published - 2002 |

Externally published | Yes |

Event | 14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden Duration: 2002 May 12 → 2002 May 16 |

### Other

Other | 14th Indium Phosphide and Related Materials Conference |
---|---|

Country | Sweden |

City | Stockholm |

Period | 02/5/12 → 02/5/16 |

### Fingerprint

### ASJC Scopus subject areas

- Materials Science(all)
- Physics and Astronomy(all)

### Cite this

_{n}/(InP)

_{n}short-period superlattice In

*Conference Proceedings - International Conference on Indium Phosphide and Related Materials*(pp. 549-551)

**Structural and optical properties of lateral composition modulation in (GaP)
_{n}/(InP)
_{n} short-period superlattice
.** / Song, Jin Dong; Kim, Jong Min; Ok, Young Woo; Seong, Tae Yeon; Lee, Yong Tak.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

_{n}/(InP)

_{n}short-period superlattice in

*Conference Proceedings - International Conference on Indium Phosphide and Related Materials.*pp. 549-551, 14th Indium Phosphide and Related Materials Conference, Stockholm, Sweden, 02/5/12.

_{n}/(InP)

_{n}short-period superlattice In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2002. p. 549-551

}

TY - GEN

T1 - Structural and optical properties of lateral composition modulation in (GaP) n/(InP) n short-period superlattice

AU - Song, Jin Dong

AU - Kim, Jong Min

AU - Ok, Young Woo

AU - Seong, Tae Yeon

AU - Lee, Yong Tak

PY - 2002

Y1 - 2002

N2 - The structural and optical properties of lateral composition modulation (LCM) in (InP) n/(GaP) n short-period superlattice grown by molecular beam epitaxy were studied with transmission electron microscopy (TEM) and photoluminescence (PL) at the growth temperature (T g) of 425 and 490 for n = 1, 1.7, and 2. LCM occurs only in a [1 -1 0] direction at T g = 490 °C for n = 1 and 2. On the contrary, LCM occurs both in [1 -1 0] and [1 1 0] directions, parallel to [1 0 0] direction, at T g ≥ 425 °C for n = 1.7. This is due to the stronger induction of LCM in tensile strain (∼ -10% for n = 1.7) than in compressive strain (∼ 6% for n = 1 and 2). The 9 K-PL measurements show that the LCM experiences the reduction of bandgap up to ∼ 345 meV as both n and T g increase. This is the best data ever reported so far. The origin of bandgap shrinkage is mainly attributed to LCM along with the contribution of CuPt-type ordering.

AB - The structural and optical properties of lateral composition modulation (LCM) in (InP) n/(GaP) n short-period superlattice grown by molecular beam epitaxy were studied with transmission electron microscopy (TEM) and photoluminescence (PL) at the growth temperature (T g) of 425 and 490 for n = 1, 1.7, and 2. LCM occurs only in a [1 -1 0] direction at T g = 490 °C for n = 1 and 2. On the contrary, LCM occurs both in [1 -1 0] and [1 1 0] directions, parallel to [1 0 0] direction, at T g ≥ 425 °C for n = 1.7. This is due to the stronger induction of LCM in tensile strain (∼ -10% for n = 1.7) than in compressive strain (∼ 6% for n = 1 and 2). The 9 K-PL measurements show that the LCM experiences the reduction of bandgap up to ∼ 345 meV as both n and T g increase. This is the best data ever reported so far. The origin of bandgap shrinkage is mainly attributed to LCM along with the contribution of CuPt-type ordering.

UR - http://www.scopus.com/inward/record.url?scp=0036051237&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036051237&partnerID=8YFLogxK

M3 - Conference contribution

SP - 549

EP - 551

BT - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

ER -