Abstract
The structural and optical properties of lateral composition modulation (LCM) in (InP)n/(GaP)n short-period superlattice grown by molecular beam epitaxy were studied with transmission electron microscopy (TEM) and photoluminescence (PL) at the growth temperature (Tg) of 425 and 490 for n = 1, 1.7, and 2. LCM occurs only in a [1 -1 0] direction at Tg = 490 °C for n = 1 and 2. On the contrary, LCM occurs both in [1 -1 0] and [1 1 0] directions, parallel to [1 0 0] direction, at Tg ≥ 425 °C for n = 1.7. This is due to the stronger induction of LCM in tensile strain (∼ -10% for n = 1.7) than in compressive strain (∼ 6% for n = 1 and 2). The 9 K-PL measurements show that the LCM experiences the reduction of bandgap up to ∼ 345 meV as both n and Tg increase. This is the best data ever reported so far. The origin of bandgap shrinkage is mainly attributed to LCM along with the contribution of CuPt-type ordering.
Original language | English |
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Pages (from-to) | 549-551 |
Number of pages | 3 |
Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
Publication status | Published - 2002 |
Externally published | Yes |
Event | 14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden Duration: 2002 May 12 → 2002 May 16 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering