Structural and optical properties of strained gallium nitride nanowires

Hee Woon Seo, Seung Yong Bae, Jeunghee Park, Hyunik Yang, Kwang Soo Park, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Bulk-quantity single crystalline wurtzite gallium nitride nanowires with a mean diameter of 25 nm were synthesized on silicon substrate using a catalyst-assisted reaction of gallium and gallium nitride mixture with ammonia. They exhibit a strong and broad photoluminescence in the energy range of 2.9-3.6 eV with no yellow band. X-ray diffraction and Raman scattering data suggest that the nanowires would experience biaxial compressive stresses in the inward radial direction and the induced tensile uniaxial stresses in the wire axis. The blue photoluminescence would originate from the recombination of the bound excitons under the compressive and tensile stresses.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.B. Wehrspohn, R Marz, S Noda, C Soukoulis
Pages163-168
Number of pages6
Volume722
Publication statusPublished - 2002
EventMaterials and Devices for Optoelectronics and Microphotonics - San Francisco, CA, United States
Duration: 2002 Apr 12002 Apr 5

Other

OtherMaterials and Devices for Optoelectronics and Microphotonics
CountryUnited States
CitySan Francisco, CA
Period02/4/102/4/5

Fingerprint

Gallium nitride
Compressive stress
Tensile stress
Nanowires
Structural properties
Photoluminescence
Optical properties
Gallium
Silicon
Ammonia
Excitons
Raman scattering
Wire
Crystalline materials
X ray diffraction
Catalysts
Substrates
gallium nitride
Direction compound
LDS 751

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Seo, H. W., Bae, S. Y., Park, J., Yang, H., Park, K. S., & Kim, S. (2002). Structural and optical properties of strained gallium nitride nanowires. In R. B. Wehrspohn, R. Marz, S. Noda, & C. Soukoulis (Eds.), Materials Research Society Symposium - Proceedings (Vol. 722, pp. 163-168)

Structural and optical properties of strained gallium nitride nanowires. / Seo, Hee Woon; Bae, Seung Yong; Park, Jeunghee; Yang, Hyunik; Park, Kwang Soo; Kim, Sangsig.

Materials Research Society Symposium - Proceedings. ed. / R.B. Wehrspohn; R Marz; S Noda; C Soukoulis. Vol. 722 2002. p. 163-168.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Seo, HW, Bae, SY, Park, J, Yang, H, Park, KS & Kim, S 2002, Structural and optical properties of strained gallium nitride nanowires. in RB Wehrspohn, R Marz, S Noda & C Soukoulis (eds), Materials Research Society Symposium - Proceedings. vol. 722, pp. 163-168, Materials and Devices for Optoelectronics and Microphotonics, San Francisco, CA, United States, 02/4/1.
Seo HW, Bae SY, Park J, Yang H, Park KS, Kim S. Structural and optical properties of strained gallium nitride nanowires. In Wehrspohn RB, Marz R, Noda S, Soukoulis C, editors, Materials Research Society Symposium - Proceedings. Vol. 722. 2002. p. 163-168
Seo, Hee Woon ; Bae, Seung Yong ; Park, Jeunghee ; Yang, Hyunik ; Park, Kwang Soo ; Kim, Sangsig. / Structural and optical properties of strained gallium nitride nanowires. Materials Research Society Symposium - Proceedings. editor / R.B. Wehrspohn ; R Marz ; S Noda ; C Soukoulis. Vol. 722 2002. pp. 163-168
@inproceedings{219ab0b1f096479b9615e2cd6c34a89a,
title = "Structural and optical properties of strained gallium nitride nanowires",
abstract = "Bulk-quantity single crystalline wurtzite gallium nitride nanowires with a mean diameter of 25 nm were synthesized on silicon substrate using a catalyst-assisted reaction of gallium and gallium nitride mixture with ammonia. They exhibit a strong and broad photoluminescence in the energy range of 2.9-3.6 eV with no yellow band. X-ray diffraction and Raman scattering data suggest that the nanowires would experience biaxial compressive stresses in the inward radial direction and the induced tensile uniaxial stresses in the wire axis. The blue photoluminescence would originate from the recombination of the bound excitons under the compressive and tensile stresses.",
author = "Seo, {Hee Woon} and Bae, {Seung Yong} and Jeunghee Park and Hyunik Yang and Park, {Kwang Soo} and Sangsig Kim",
year = "2002",
language = "English",
volume = "722",
pages = "163--168",
editor = "R.B. Wehrspohn and R Marz and S Noda and C Soukoulis",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Structural and optical properties of strained gallium nitride nanowires

AU - Seo, Hee Woon

AU - Bae, Seung Yong

AU - Park, Jeunghee

AU - Yang, Hyunik

AU - Park, Kwang Soo

AU - Kim, Sangsig

PY - 2002

Y1 - 2002

N2 - Bulk-quantity single crystalline wurtzite gallium nitride nanowires with a mean diameter of 25 nm were synthesized on silicon substrate using a catalyst-assisted reaction of gallium and gallium nitride mixture with ammonia. They exhibit a strong and broad photoluminescence in the energy range of 2.9-3.6 eV with no yellow band. X-ray diffraction and Raman scattering data suggest that the nanowires would experience biaxial compressive stresses in the inward radial direction and the induced tensile uniaxial stresses in the wire axis. The blue photoluminescence would originate from the recombination of the bound excitons under the compressive and tensile stresses.

AB - Bulk-quantity single crystalline wurtzite gallium nitride nanowires with a mean diameter of 25 nm were synthesized on silicon substrate using a catalyst-assisted reaction of gallium and gallium nitride mixture with ammonia. They exhibit a strong and broad photoluminescence in the energy range of 2.9-3.6 eV with no yellow band. X-ray diffraction and Raman scattering data suggest that the nanowires would experience biaxial compressive stresses in the inward radial direction and the induced tensile uniaxial stresses in the wire axis. The blue photoluminescence would originate from the recombination of the bound excitons under the compressive and tensile stresses.

UR - http://www.scopus.com/inward/record.url?scp=0036456351&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036456351&partnerID=8YFLogxK

M3 - Conference contribution

VL - 722

SP - 163

EP - 168

BT - Materials Research Society Symposium - Proceedings

A2 - Wehrspohn, R.B.

A2 - Marz, R

A2 - Noda, S

A2 - Soukoulis, C

ER -