Structural and optical properties of strained gallium nitride nanowires

Hee Woon Seo, Seung Yong Bae, Jeunghee Park, Hyunik Yang, Kwang Soo Park, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Bulk-quantity single crystalline wurtzite gallium nitride nanowires with a mean diameter of 25 nm were synthesized on silicon substrate using a catalyst-assisted reaction of gallium and gallium nitride mixture with ammonia. They exhibit a strong and broad photoluminescence in the energy range of 2.9-3.6 eV with no yellow band. X-ray diffraction and Raman scattering data suggest that the nanowires would experience biaxial compressive stresses in the inward radial direction and the induced tensile uniaxial stresses in the wire axis. The blue photoluminescence would originate from the recombination of the bound excitons under the compressive and tensile stresses.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.B. Wehrspohn, R Marz, S Noda, C Soukoulis
Number of pages6
Publication statusPublished - 2002
EventMaterials and Devices for Optoelectronics and Microphotonics - San Francisco, CA, United States
Duration: 2002 Apr 12002 Apr 5


OtherMaterials and Devices for Optoelectronics and Microphotonics
CountryUnited States
CitySan Francisco, CA


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Seo, H. W., Bae, S. Y., Park, J., Yang, H., Park, K. S., & Kim, S. (2002). Structural and optical properties of strained gallium nitride nanowires. In R. B. Wehrspohn, R. Marz, S. Noda, & C. Soukoulis (Eds.), Materials Research Society Symposium - Proceedings (Vol. 722, pp. 163-168)