Structural and optical properties of ZnO films prepared by using ion beam deposition: Effect of annealing

Dae Woo Jeon, Ju Won Jeon, Myoung Kim, Mi Hee Lee, Lee Woon Jang, In-Hwan Lee, Hyung Do Yoon, Sung Min Hwang

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ZnO films were deposited on AlN/Si (111) substrates at 500 °C by using ion beam deposition. The as-deposited films were annealed for an hour in a mixture of air and oxygen gas at 700, 800, or 900 °C. X-ray diffraction revealed that ZnO films were grown epitaxially on the AlN/Si (111) substrates and were oriented along the c-axis. The structural properties were improved by increasing the annealing temperature. The morphology of the ZnO films was changed dramatically after thermal annealing. The optical properties of the annealed ZnO films were examined by using photoluminescence (PL). The PL exhibited near-band-edge (NBE) emission and deep-level emission. The samples annealed at higher temperatures showed strong NBE emission lines, together with longitudinal optical phonon replicas of free exciton recombination.

Original languageEnglish
Pages (from-to)1867-1870
Number of pages4
JournalJournal of the Korean Physical Society
Issue number61
Publication statusPublished - 2010 Dec 1
Externally publishedYes



  • Annealing
  • Ion beam deposition
  • Photoluminescence
  • ZnO

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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