ZnO Mg0.1 Zn0.9 O multiquantum-well (MQW) structures were grown on ZnO substrates by molecular beam epitaxy. Abrupt interfaces and well/barrier width in the MQWs were confirmed by x-ray diffraction measurement and transmission electron microscopy. The transition energy of the localized exciton in the ZnO Mg0.1 Zn0.9 O MQWs with well/barrier width of 58 nm was found to be about 3.375 eV at low temperature, consistent with theoretical calculation. The first subband energies in the conduction and valence band were calculated to be 19.2 and 5.4 meV, respectively. The transition energy showed no shift with excitation power, indicating that the polarization-induced electric field is negligible in the ZnO Mg0.1 Zn0.9 O MQW structures.
|Journal||Applied Physics Letters|
|Publication status||Published - 2007|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)