Structural and optical properties of ZnO Mg0.1 Zn0.9 O multiple quantum wells grown on ZnO substrates

Junjie Zhu, A. Yu Kuznetsov, Myung Soo Han, Young Sik Park, Haeng Keun Ahn, Jin Woo Ju, In-Hwan Lee

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

ZnO Mg0.1 Zn0.9 O multiquantum-well (MQW) structures were grown on ZnO substrates by molecular beam epitaxy. Abrupt interfaces and well/barrier width in the MQWs were confirmed by x-ray diffraction measurement and transmission electron microscopy. The transition energy of the localized exciton in the ZnO Mg0.1 Zn0.9 O MQWs with well/barrier width of 58 nm was found to be about 3.375 eV at low temperature, consistent with theoretical calculation. The first subband energies in the conduction and valence band were calculated to be 19.2 and 5.4 meV, respectively. The transition energy showed no shift with excitation power, indicating that the polarization-induced electric field is negligible in the ZnO Mg0.1 Zn0.9 O MQW structures.

Original languageEnglish
Article number211909
JournalApplied Physics Letters
Volume90
Issue number21
DOIs
Publication statusPublished - 2007 Jun 1
Externally publishedYes

Fingerprint

quantum wells
optical properties
energy
conduction bands
x ray diffraction
molecular beam epitaxy
excitons
valence
transmission electron microscopy
electric fields
shift
polarization
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Structural and optical properties of ZnO Mg0.1 Zn0.9 O multiple quantum wells grown on ZnO substrates. / Zhu, Junjie; Kuznetsov, A. Yu; Han, Myung Soo; Park, Young Sik; Ahn, Haeng Keun; Ju, Jin Woo; Lee, In-Hwan.

In: Applied Physics Letters, Vol. 90, No. 21, 211909, 01.06.2007.

Research output: Contribution to journalArticle

Zhu, Junjie ; Kuznetsov, A. Yu ; Han, Myung Soo ; Park, Young Sik ; Ahn, Haeng Keun ; Ju, Jin Woo ; Lee, In-Hwan. / Structural and optical properties of ZnO Mg0.1 Zn0.9 O multiple quantum wells grown on ZnO substrates. In: Applied Physics Letters. 2007 ; Vol. 90, No. 21.
@article{c0ad99ebcd1b4158a35acbc0151bc843,
title = "Structural and optical properties of ZnO Mg0.1 Zn0.9 O multiple quantum wells grown on ZnO substrates",
abstract = "ZnO Mg0.1 Zn0.9 O multiquantum-well (MQW) structures were grown on ZnO substrates by molecular beam epitaxy. Abrupt interfaces and well/barrier width in the MQWs were confirmed by x-ray diffraction measurement and transmission electron microscopy. The transition energy of the localized exciton in the ZnO Mg0.1 Zn0.9 O MQWs with well/barrier width of 58 nm was found to be about 3.375 eV at low temperature, consistent with theoretical calculation. The first subband energies in the conduction and valence band were calculated to be 19.2 and 5.4 meV, respectively. The transition energy showed no shift with excitation power, indicating that the polarization-induced electric field is negligible in the ZnO Mg0.1 Zn0.9 O MQW structures.",
author = "Junjie Zhu and Kuznetsov, {A. Yu} and Han, {Myung Soo} and Park, {Young Sik} and Ahn, {Haeng Keun} and Ju, {Jin Woo} and In-Hwan Lee",
year = "2007",
month = "6",
day = "1",
doi = "10.1063/1.2742574",
language = "English",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",

}

TY - JOUR

T1 - Structural and optical properties of ZnO Mg0.1 Zn0.9 O multiple quantum wells grown on ZnO substrates

AU - Zhu, Junjie

AU - Kuznetsov, A. Yu

AU - Han, Myung Soo

AU - Park, Young Sik

AU - Ahn, Haeng Keun

AU - Ju, Jin Woo

AU - Lee, In-Hwan

PY - 2007/6/1

Y1 - 2007/6/1

N2 - ZnO Mg0.1 Zn0.9 O multiquantum-well (MQW) structures were grown on ZnO substrates by molecular beam epitaxy. Abrupt interfaces and well/barrier width in the MQWs were confirmed by x-ray diffraction measurement and transmission electron microscopy. The transition energy of the localized exciton in the ZnO Mg0.1 Zn0.9 O MQWs with well/barrier width of 58 nm was found to be about 3.375 eV at low temperature, consistent with theoretical calculation. The first subband energies in the conduction and valence band were calculated to be 19.2 and 5.4 meV, respectively. The transition energy showed no shift with excitation power, indicating that the polarization-induced electric field is negligible in the ZnO Mg0.1 Zn0.9 O MQW structures.

AB - ZnO Mg0.1 Zn0.9 O multiquantum-well (MQW) structures were grown on ZnO substrates by molecular beam epitaxy. Abrupt interfaces and well/barrier width in the MQWs were confirmed by x-ray diffraction measurement and transmission electron microscopy. The transition energy of the localized exciton in the ZnO Mg0.1 Zn0.9 O MQWs with well/barrier width of 58 nm was found to be about 3.375 eV at low temperature, consistent with theoretical calculation. The first subband energies in the conduction and valence band were calculated to be 19.2 and 5.4 meV, respectively. The transition energy showed no shift with excitation power, indicating that the polarization-induced electric field is negligible in the ZnO Mg0.1 Zn0.9 O MQW structures.

UR - http://www.scopus.com/inward/record.url?scp=34249740801&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249740801&partnerID=8YFLogxK

U2 - 10.1063/1.2742574

DO - 10.1063/1.2742574

M3 - Article

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 211909

ER -