Structural and optical properties of ZnO Mg0.1 Zn0.9 O multiple quantum wells grown on ZnO substrates

Junjie Zhu; A. Yu Kuznetsov; Myung Soo Han; Young Sik Park; Haeng Keun Ahn; Jin Woo Ju; In Hwan Lee

doi:10.1063/1.2742574

Structural and optical properties of ZnO Mg0.1 Zn0.9 O multiple quantum wells grown on ZnO substrates

Junjie Zhu, A. Yu Kuznetsov, Myung Soo Han, Young Sik Park, Haeng Keun Ahn, Jin Woo Ju, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

ZnO Mg0.1 Zn0.9 O multiquantum-well (MQW) structures were grown on ZnO substrates by molecular beam epitaxy. Abrupt interfaces and well/barrier width in the MQWs were confirmed by x-ray diffraction measurement and transmission electron microscopy. The transition energy of the localized exciton in the ZnO Mg0.1 Zn0.9 O MQWs with well/barrier width of 58 nm was found to be about 3.375 eV at low temperature, consistent with theoretical calculation. The first subband energies in the conduction and valence band were calculated to be 19.2 and 5.4 meV, respectively. The transition energy showed no shift with excitation power, indicating that the polarization-induced electric field is negligible in the ZnO Mg0.1 Zn0.9 O MQW structures.

Original language	English
Article number	211909
Journal	Applied Physics Letters
Volume	90
Issue number	21
DOIs	https://doi.org/10.1063/1.2742574
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{c0ad99ebcd1b4158a35acbc0151bc843,

title = "Structural and optical properties of ZnO Mg0.1 Zn0.9 O multiple quantum wells grown on ZnO substrates",

abstract = "ZnO Mg0.1 Zn0.9 O multiquantum-well (MQW) structures were grown on ZnO substrates by molecular beam epitaxy. Abrupt interfaces and well/barrier width in the MQWs were confirmed by x-ray diffraction measurement and transmission electron microscopy. The transition energy of the localized exciton in the ZnO Mg0.1 Zn0.9 O MQWs with well/barrier width of 58 nm was found to be about 3.375 eV at low temperature, consistent with theoretical calculation. The first subband energies in the conduction and valence band were calculated to be 19.2 and 5.4 meV, respectively. The transition energy showed no shift with excitation power, indicating that the polarization-induced electric field is negligible in the ZnO Mg0.1 Zn0.9 O MQW structures.",

author = "Junjie Zhu and Kuznetsov, {A. Yu} and Han, {Myung Soo} and Park, {Young Sik} and Ahn, {Haeng Keun} and Ju, {Jin Woo} and Lee, {In Hwan}",

note = "Funding Information: Financial support from NANOMAT program administrated by the Norwegian Research Council is appreciated. Also, the authors are grateful to the support by the grant of Post-Doctoral Program, Chonbuk National University (2005) and Post BK21 Program of Korean Government.",

year = "2007",

doi = "10.1063/1.2742574",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

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TY - JOUR

T1 - Structural and optical properties of ZnO Mg0.1 Zn0.9 O multiple quantum wells grown on ZnO substrates

AU - Zhu, Junjie

AU - Kuznetsov, A. Yu

AU - Han, Myung Soo

AU - Park, Young Sik

AU - Ahn, Haeng Keun

AU - Ju, Jin Woo

AU - Lee, In Hwan

N1 - Funding Information: Financial support from NANOMAT program administrated by the Norwegian Research Council is appreciated. Also, the authors are grateful to the support by the grant of Post-Doctoral Program, Chonbuk National University (2005) and Post BK21 Program of Korean Government.

PY - 2007

Y1 - 2007

N2 - ZnO Mg0.1 Zn0.9 O multiquantum-well (MQW) structures were grown on ZnO substrates by molecular beam epitaxy. Abrupt interfaces and well/barrier width in the MQWs were confirmed by x-ray diffraction measurement and transmission electron microscopy. The transition energy of the localized exciton in the ZnO Mg0.1 Zn0.9 O MQWs with well/barrier width of 58 nm was found to be about 3.375 eV at low temperature, consistent with theoretical calculation. The first subband energies in the conduction and valence band were calculated to be 19.2 and 5.4 meV, respectively. The transition energy showed no shift with excitation power, indicating that the polarization-induced electric field is negligible in the ZnO Mg0.1 Zn0.9 O MQW structures.

AB - ZnO Mg0.1 Zn0.9 O multiquantum-well (MQW) structures were grown on ZnO substrates by molecular beam epitaxy. Abrupt interfaces and well/barrier width in the MQWs were confirmed by x-ray diffraction measurement and transmission electron microscopy. The transition energy of the localized exciton in the ZnO Mg0.1 Zn0.9 O MQWs with well/barrier width of 58 nm was found to be about 3.375 eV at low temperature, consistent with theoretical calculation. The first subband energies in the conduction and valence band were calculated to be 19.2 and 5.4 meV, respectively. The transition energy showed no shift with excitation power, indicating that the polarization-induced electric field is negligible in the ZnO Mg0.1 Zn0.9 O MQW structures.

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U2 - 10.1063/1.2742574

DO - 10.1063/1.2742574

M3 - Article

AN - SCOPUS:34249740801

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 211909

ER -

Structural and optical properties of ZnO Mg0.1 Zn0.9 O multiple quantum wells grown on ZnO substrates

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