Structural characteristics of Bi2Te3 and Sb 2Te3 films on (001) GaAs substrates grown by MOCVD

Jeong Hun Kim, Sung Do Kwon, Dae Yong Jeong, Byeong Kwon Ju, Seok Jin Yoon, Jin Sang Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Metal organic vapour phase epitaxy has been investigated for growth of Bi2Te3 and Sb2Te3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. High resolution TEM and x-ray diffraction patterns revealed that films had single crystalline phases with a preferential c-orientation and layered structures resulting from the van der Waals bonding nature in these materials. By optimizing growth parameters such as precursor ratio, growth temperatures, and flow rate in reactor, we could obtain Seebeck coefficient of -160μVK-1 for Bi2Te3 and +110μVK-1 for Sb2Te3 films, respectively. The high Seebeck coefficient and atomistically smooth surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi2Te3/Sb2Te3 super lattice structures for thin film thermoelectric device applications.

Original languageEnglish
Title of host publicationInternational Conference on Thermoelectrics, ICT, Proceedings
Pages411-413
Number of pages3
DOIs
Publication statusPublished - 2006 Dec 1
EventICT'06 - 25th International Conference on Thermoelectrics - Vienna, Austria
Duration: 2006 Aug 62006 Aug 10

Other

OtherICT'06 - 25th International Conference on Thermoelectrics
CountryAustria
CityVienna
Period06/8/606/8/10

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kim, J. H., Kwon, S. D., Jeong, D. Y., Ju, B. K., Yoon, S. J., & Kim, J. S. (2006). Structural characteristics of Bi2Te3 and Sb 2Te3 films on (001) GaAs substrates grown by MOCVD. In International Conference on Thermoelectrics, ICT, Proceedings (pp. 411-413). [4133317] https://doi.org/10.1109/ICT.2006.331284