Structural defects responsible for excessive leakage current in Schottky diodes prepared on undoped n-GaN films grown by hydride vapor phase epitaxy

Alexander Y. Polyakov, Eugene B. Yakimov, Nikolai B. Smirnov, Anatoliy V. Govorkov, Alexander S. Usikov, Heikki Helava, Yuri N. Makarov, In-Hwan Lee

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