Structural investigation of the bias-enhanced nucleation and growth of diamond films by microwave plasma chemical vapor deposition

Do Geun Kim, Tae Yeon Seong, Young Joon Baik

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Transmission electron microscopy (TEM), transmission electron diffraction (TED), atomic force microscopy (AFM), and scanning electron microscopy have been used to investigate the initial nucleation process and growth behavior of diamond films by microwave plasma chemical vapor deposition. TED examination revealed epitaxial relations between the β-SiC and the Si, and the diamond and the β-SiC, which depended on the bias-enhanced nucleation (BEN) time and methane (CH4) concentration. The highly oriented (001) diamond films were obtained after 25 min BEN for 4% CH4 and 20 min BEN for 8% CH4. TEM revealed the β-SiC crystallites 2-25 nm across and the diamond crystallites 3-40 nm in size which depended on the CH4 concentration and the BEN time. As the BEN time increased, the density of the β-SiC cyrstallites increased from ∼2.7 × 1011 to ∼3.4 × 1012 cm2, while that of the diamond crystallites varied from ∼2.0 × 109 to ∼4.0 × 1010 cm-2. Discrepancy between the densities obtained using TEM and AFM is discussed. It is shown that the heteroepitaxially oriented diamond crystallites are critically important for the growth of the highly (001)-oriented diamond films, although the heteroepitaxially oriented β-SiC crystallites could serve as nucleation sites for the growth of the diamond films.

Original languageEnglish
Pages (from-to)2095-2100
Number of pages6
JournalJournal of the Electrochemical Society
Volume145
Issue number6
Publication statusPublished - 1998 Jun 1
Externally publishedYes

Fingerprint

Diamond films
diamond films
Chemical vapor deposition
Nucleation
Microwaves
vapor deposition
nucleation
Crystallites
Diamond
Plasmas
crystallites
microwaves
Diamonds
diamonds
Transmission electron microscopy
Electron diffraction
transmission electron microscopy
Atomic force microscopy
electron diffraction
atomic force microscopy

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Structural investigation of the bias-enhanced nucleation and growth of diamond films by microwave plasma chemical vapor deposition. / Kim, Do Geun; Seong, Tae Yeon; Baik, Young Joon.

In: Journal of the Electrochemical Society, Vol. 145, No. 6, 01.06.1998, p. 2095-2100.

Research output: Contribution to journalArticle

@article{d89d1d3f7298404eb4b2c2302bde635c,
title = "Structural investigation of the bias-enhanced nucleation and growth of diamond films by microwave plasma chemical vapor deposition",
abstract = "Transmission electron microscopy (TEM), transmission electron diffraction (TED), atomic force microscopy (AFM), and scanning electron microscopy have been used to investigate the initial nucleation process and growth behavior of diamond films by microwave plasma chemical vapor deposition. TED examination revealed epitaxial relations between the β-SiC and the Si, and the diamond and the β-SiC, which depended on the bias-enhanced nucleation (BEN) time and methane (CH4) concentration. The highly oriented (001) diamond films were obtained after 25 min BEN for 4{\%} CH4 and 20 min BEN for 8{\%} CH4. TEM revealed the β-SiC crystallites 2-25 nm across and the diamond crystallites 3-40 nm in size which depended on the CH4 concentration and the BEN time. As the BEN time increased, the density of the β-SiC cyrstallites increased from ∼2.7 × 1011 to ∼3.4 × 1012 cm2, while that of the diamond crystallites varied from ∼2.0 × 109 to ∼4.0 × 1010 cm-2. Discrepancy between the densities obtained using TEM and AFM is discussed. It is shown that the heteroepitaxially oriented diamond crystallites are critically important for the growth of the highly (001)-oriented diamond films, although the heteroepitaxially oriented β-SiC crystallites could serve as nucleation sites for the growth of the diamond films.",
author = "Kim, {Do Geun} and Seong, {Tae Yeon} and Baik, {Young Joon}",
year = "1998",
month = "6",
day = "1",
language = "English",
volume = "145",
pages = "2095--2100",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "6",

}

TY - JOUR

T1 - Structural investigation of the bias-enhanced nucleation and growth of diamond films by microwave plasma chemical vapor deposition

AU - Kim, Do Geun

AU - Seong, Tae Yeon

AU - Baik, Young Joon

PY - 1998/6/1

Y1 - 1998/6/1

N2 - Transmission electron microscopy (TEM), transmission electron diffraction (TED), atomic force microscopy (AFM), and scanning electron microscopy have been used to investigate the initial nucleation process and growth behavior of diamond films by microwave plasma chemical vapor deposition. TED examination revealed epitaxial relations between the β-SiC and the Si, and the diamond and the β-SiC, which depended on the bias-enhanced nucleation (BEN) time and methane (CH4) concentration. The highly oriented (001) diamond films were obtained after 25 min BEN for 4% CH4 and 20 min BEN for 8% CH4. TEM revealed the β-SiC crystallites 2-25 nm across and the diamond crystallites 3-40 nm in size which depended on the CH4 concentration and the BEN time. As the BEN time increased, the density of the β-SiC cyrstallites increased from ∼2.7 × 1011 to ∼3.4 × 1012 cm2, while that of the diamond crystallites varied from ∼2.0 × 109 to ∼4.0 × 1010 cm-2. Discrepancy between the densities obtained using TEM and AFM is discussed. It is shown that the heteroepitaxially oriented diamond crystallites are critically important for the growth of the highly (001)-oriented diamond films, although the heteroepitaxially oriented β-SiC crystallites could serve as nucleation sites for the growth of the diamond films.

AB - Transmission electron microscopy (TEM), transmission electron diffraction (TED), atomic force microscopy (AFM), and scanning electron microscopy have been used to investigate the initial nucleation process and growth behavior of diamond films by microwave plasma chemical vapor deposition. TED examination revealed epitaxial relations between the β-SiC and the Si, and the diamond and the β-SiC, which depended on the bias-enhanced nucleation (BEN) time and methane (CH4) concentration. The highly oriented (001) diamond films were obtained after 25 min BEN for 4% CH4 and 20 min BEN for 8% CH4. TEM revealed the β-SiC crystallites 2-25 nm across and the diamond crystallites 3-40 nm in size which depended on the CH4 concentration and the BEN time. As the BEN time increased, the density of the β-SiC cyrstallites increased from ∼2.7 × 1011 to ∼3.4 × 1012 cm2, while that of the diamond crystallites varied from ∼2.0 × 109 to ∼4.0 × 1010 cm-2. Discrepancy between the densities obtained using TEM and AFM is discussed. It is shown that the heteroepitaxially oriented diamond crystallites are critically important for the growth of the highly (001)-oriented diamond films, although the heteroepitaxially oriented β-SiC crystallites could serve as nucleation sites for the growth of the diamond films.

UR - http://www.scopus.com/inward/record.url?scp=0032099066&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032099066&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032099066

VL - 145

SP - 2095

EP - 2100

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 6

ER -