Structural properties of CdO layers grown on GaAs (0 0 1) substrates by metalorganic molecular beam epitaxy

Bong Joong Kim, Y. W. Ok, Tae Yeon Seong, A. B M A Ashrafi, H. Kumano, I. Suemune

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Transmission electron microscopy (TEM) and transmission electron diffraction (TED) examination has been made to investigate the microstructural behaviour of rock-salt CdO layers grown on (0 0 1) GaAs substrates with two different buffer layers of ZnS and ZnO/ZnS. It is shown that the CdO layer grown on the ZnS buffer layer has epitaxial relationship to the GaAs substrate, even though a low density of CdO nano-crystallites (18-25 nm across) are formed at the CdO/ZnS interface region. TEM and TED results show that the CdO layer grown on the ZnO/ZnS buffer layer is polycrystalline. TED results also show that the ZnO buffer layer is polycrystalline with a mixture of wurtzite and zinc-blende phases, which results in the formation of polycrystalline CdO layers.

Original languageEnglish
Pages (from-to)219-225
Number of pages7
JournalJournal of Crystal Growth
Issue number1-3
Publication statusPublished - 2003 May 1
Externally publishedYes



  • A1. Crystal structure
  • A1. Defects
  • A3. Metalorganic molecular beam epitaxy
  • B1. Oxides
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics

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