Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

Young Woo Ok, Chel Jong Choi, Tae Yeon Seong, K. Uesugi, I. Suemune

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Detailed transmission electron microscopy (TEM) and transmission electron diffraction (TED) examination has been made of metalorganic molecular beam epitaxial GaAsN layers grown on (001) GaAs substrates. TEM results show that lateral composition modulation occurs in the GaAs1-xNx layer (x < 6.75%). It is shown that increasing N composition and Se (dopant) concentration leads to poor crystallinity. It is also shown that the addition of Se increases N composition. Atomic force microscopy (AFM) results show that the surfaces of the samples experience a morphological change from faceting to islanding, as the N composition and Se concentration increase. Based on the TEM and AFM results, a simple model is given to explain the formation of the lateral composition modulation.

Original languageEnglish
Article number79
Pages (from-to)900-906
Number of pages7
JournalJournal of Electronic Materials
Volume30
Issue number7
DOIs
Publication statusPublished - 2001
Externally publishedYes

Keywords

  • Atomic force microscopy (AFM)
  • Doping
  • GaAsN
  • Metalorganic molecular beam epitaxy (MOMBE)
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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