Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

Y. W. Ok, C. J. Choi, Tae Yeon Seong, K. Uesugi, I. Suemune

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Detailed transmission electron microscopy (TEM) and transmission electron diffraction (TED) examination has been made of metalorganic molecular beam epitaxial GaAsN layers grown on (001) GaAs substrates. TEM results show that lateral composition modulation occurs in the GaAs 1-xN x layer (x < 6.75%). It is shown that increasing N composition and Se (dopant) concentration leads to poor crystallinity. It is also shown that the addition of Se increases N composition. Atomic force microscopy (AFM) results show that the surfaces of the samples experience a morphological change from faceting to islanding, as the N composition and Se concentration increase. Based on the TEM and AFM results, a simple model is given to explain the formation of the lateral composition modulation.

Original languageEnglish
Pages (from-to)900-906
Number of pages7
JournalJournal of Electronic Materials
Volume30
Issue number7
Publication statusPublished - 2001 Jul 1
Externally publishedYes

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Keywords

  • Atomic force microscopy (AFM)
  • Doping
  • GaAsN
  • Metalorganic molecular beam epitaxy (MOMBE)
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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