Structural properties of nickel silicided Si1-xGex(001) layers

Young Woo Ok, Sang Hoon Kim, Young Joo Song, Kyu Hwan Shim, Tae Yeon Seong

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have investigated the interfacial reactions of Ni films on Si1-xGex (x = 0.0-0.2) epitaxial (001) layers as a function of the annealing temperature between 300 and 800°C. It is shown that the Ni-silicided Si1-xGex layers have a higher sheet resistance and poorer surface and interface morphologies, compared to the Ni-silicided Si layer. As the annealing temperature is increased, the silicide layers become irregular with thermal grooving and, consequently, become agglomerated. This is more severe in the sample with a higher Ge content. Glancing angle x-ray diffraction results show that, unlike the Ni-silicided Si sample, for the Si1-xGex (x = 0.1 and 0.2) samples, no phase transition from Ni germanosilicide (Ni(Si1-mGem)) to Ni(Si1-nGen)2 occurs throughout the annealing temperature domain. Transmission electron microscopy and energy dispersive spectroscopy results show that Ge atoms outdiffuse from the Ni germanosilicide as the annealing temperature increases. The outdiffused Ge atoms are segregated at the Ni germanosilicide/Si1-xGex interfaces and at the surface regions between the agglomerated germanosilicide. A simple model is given to describe the Ge segregation and silicide islanding behaviours.

Original languageEnglish
Pages (from-to)285-290
Number of pages6
JournalSemiconductor Science and Technology
Volume19
Issue number2
DOIs
Publication statusPublished - 2004 Feb 1
Externally publishedYes

Fingerprint

Nickel
Structural properties
nickel
Annealing
annealing
grooving
Atoms
Temperature
temperature
Sheet resistance
Epitaxial layers
Surface chemistry
atoms
Energy dispersive spectroscopy
x ray diffraction
Diffraction
Phase transitions
electron energy
Transmission electron microscopy
X rays

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Structural properties of nickel silicided Si1-xGex(001) layers. / Ok, Young Woo; Kim, Sang Hoon; Song, Young Joo; Shim, Kyu Hwan; Seong, Tae Yeon.

In: Semiconductor Science and Technology, Vol. 19, No. 2, 01.02.2004, p. 285-290.

Research output: Contribution to journalArticle

Ok, Young Woo ; Kim, Sang Hoon ; Song, Young Joo ; Shim, Kyu Hwan ; Seong, Tae Yeon. / Structural properties of nickel silicided Si1-xGex(001) layers. In: Semiconductor Science and Technology. 2004 ; Vol. 19, No. 2. pp. 285-290.
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