Structural studies of v2O5 nanowires by ultrahigh vacuum-scanning tunneling microscope and atomic force microscope

Yong Kwan Kim, Sung Joon Park, Hyeong Dong Lee, Gyu-Tae Kim, Jeong Sook Ha

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have investigated the structures and electronic properties of vanadium pentoxide (V2O5) nanowires synthesized by a solgel process. The time-dependent evolution of the V2O5 nanowires at different temperatures was systematically studied by atomic force microscopy. The structural dimension and the current-voltage (I-V) characteristics were measured by scanning tunneling microscopy/spectroscopy. V2O5 nanowires with a cross section of 10 times; 1.5 nm2, whose length varied with the duration time in sol, were synthesized. The V2O5 nanowires adsorbed on a self-assembled monolayer of aminothiophenol (ATP) on a Au(111)/mica substrate showed semiconducting I-V characteristics. The height of the V2O 5 nanowires decreased from 1.5 to 0.8 nm with prolonged annealing at temperatures above 100°C, implying the existence of a water interlayer in the V2O5 double-layer structure.

Original languageEnglish
Pages (from-to)2275-2277
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number3 B
DOIs
Publication statusPublished - 2006 Mar 27

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Keywords

  • Atomic force microscopy
  • Scanning tunneling microscopy
  • Semiconducting wire
  • Sol-gel synthesis
  • Vo nanowire

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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