Structural studies of v2O5 nanowires by ultrahigh vacuum-scanning tunneling microscope and atomic force microscope

Yong Kwan Kim, Sung Joon Park, Hyeong Dong Lee, Gyu-Tae Kim, Jeong Sook Ha

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4 Citations (Scopus)

Abstract

We have investigated the structures and electronic properties of vanadium pentoxide (V2O5) nanowires synthesized by a solgel process. The time-dependent evolution of the V2O5 nanowires at different temperatures was systematically studied by atomic force microscopy. The structural dimension and the current-voltage (I-V) characteristics were measured by scanning tunneling microscopy/spectroscopy. V2O5 nanowires with a cross section of 10 times; 1.5 nm2, whose length varied with the duration time in sol, were synthesized. The V2O5 nanowires adsorbed on a self-assembled monolayer of aminothiophenol (ATP) on a Au(111)/mica substrate showed semiconducting I-V characteristics. The height of the V2O 5 nanowires decreased from 1.5 to 0.8 nm with prolonged annealing at temperatures above 100°C, implying the existence of a water interlayer in the V2O5 double-layer structure.

Original languageEnglish
Pages (from-to)2275-2277
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number3 B
DOIs
Publication statusPublished - 2006 Mar 27

Fingerprint

Ultrahigh vacuum
ultrahigh vacuum
Nanowires
Microscopes
nanowires
microscopes
Scanning
scanning
Mica
Scanning tunneling microscopy
Self assembled monolayers
Sols
mica
Electronic properties
Vanadium
vanadium
scanning tunneling microscopy
interlayers
Atomic force microscopy
atomic force microscopy

Keywords

  • Atomic force microscopy
  • Scanning tunneling microscopy
  • Semiconducting wire
  • Sol-gel synthesis
  • Vo nanowire

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Structural studies of v2O5 nanowires by ultrahigh vacuum-scanning tunneling microscope and atomic force microscope",
abstract = "We have investigated the structures and electronic properties of vanadium pentoxide (V2O5) nanowires synthesized by a solgel process. The time-dependent evolution of the V2O5 nanowires at different temperatures was systematically studied by atomic force microscopy. The structural dimension and the current-voltage (I-V) characteristics were measured by scanning tunneling microscopy/spectroscopy. V2O5 nanowires with a cross section of 10 times; 1.5 nm2, whose length varied with the duration time in sol, were synthesized. The V2O5 nanowires adsorbed on a self-assembled monolayer of aminothiophenol (ATP) on a Au(111)/mica substrate showed semiconducting I-V characteristics. The height of the V2O 5 nanowires decreased from 1.5 to 0.8 nm with prolonged annealing at temperatures above 100°C, implying the existence of a water interlayer in the V2O5 double-layer structure.",
keywords = "Atomic force microscopy, Scanning tunneling microscopy, Semiconducting wire, Sol-gel synthesis, Vo nanowire",
author = "Kim, {Yong Kwan} and Park, {Sung Joon} and Lee, {Hyeong Dong} and Gyu-Tae Kim and Ha, {Jeong Sook}",
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T1 - Structural studies of v2O5 nanowires by ultrahigh vacuum-scanning tunneling microscope and atomic force microscope

AU - Kim, Yong Kwan

AU - Park, Sung Joon

AU - Lee, Hyeong Dong

AU - Kim, Gyu-Tae

AU - Ha, Jeong Sook

PY - 2006/3/27

Y1 - 2006/3/27

N2 - We have investigated the structures and electronic properties of vanadium pentoxide (V2O5) nanowires synthesized by a solgel process. The time-dependent evolution of the V2O5 nanowires at different temperatures was systematically studied by atomic force microscopy. The structural dimension and the current-voltage (I-V) characteristics were measured by scanning tunneling microscopy/spectroscopy. V2O5 nanowires with a cross section of 10 times; 1.5 nm2, whose length varied with the duration time in sol, were synthesized. The V2O5 nanowires adsorbed on a self-assembled monolayer of aminothiophenol (ATP) on a Au(111)/mica substrate showed semiconducting I-V characteristics. The height of the V2O 5 nanowires decreased from 1.5 to 0.8 nm with prolonged annealing at temperatures above 100°C, implying the existence of a water interlayer in the V2O5 double-layer structure.

AB - We have investigated the structures and electronic properties of vanadium pentoxide (V2O5) nanowires synthesized by a solgel process. The time-dependent evolution of the V2O5 nanowires at different temperatures was systematically studied by atomic force microscopy. The structural dimension and the current-voltage (I-V) characteristics were measured by scanning tunneling microscopy/spectroscopy. V2O5 nanowires with a cross section of 10 times; 1.5 nm2, whose length varied with the duration time in sol, were synthesized. The V2O5 nanowires adsorbed on a self-assembled monolayer of aminothiophenol (ATP) on a Au(111)/mica substrate showed semiconducting I-V characteristics. The height of the V2O 5 nanowires decreased from 1.5 to 0.8 nm with prolonged annealing at temperatures above 100°C, implying the existence of a water interlayer in the V2O5 double-layer structure.

KW - Atomic force microscopy

KW - Scanning tunneling microscopy

KW - Semiconducting wire

KW - Sol-gel synthesis

KW - Vo nanowire

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