Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy

In T. Bae, Tae Yeon Seong, Young J. Park, Eun Kyu Kim

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Abstract

Detailed transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed on organometallic vapor phase epitaxial GaN layers grown on (001) GaAs substrate to investigate microstructures and phase stability. TED and TEM results exhibit the occurrence of a mixed phase of GaN. The wurtzite (α) phase grains are embedded in the zinc-blende (β) phase matrix. It is shown that there are two types of the wurtzite GaN phase, namely, the epitaxial wurtzite and the tilted wurtzite. The tilted wurtzite grains are rotated some degrees ranging from approx. 5°C to approx. 35°C regarding the GaAs substrate. A simple model is presented to describe the occurrence of the mixed phases and the two types of the wurtzite phase.

Original languageEnglish
Pages (from-to)873-877
Number of pages5
JournalJournal of Electronic Materials
Volume28
Issue number7
Publication statusPublished - 1999 Jul 1
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

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