Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy

In T. Bae, Tae Yeon Seong, Young J. Park, Eun Kyu Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Detailed transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed on organometallic vapor phase epitaxial GaN layers grown on (001) GaAs substrate to investigate microstructures and phase stability. TED and TEM results exhibit the occurrence of a mixed phase of GaN. The wurtzite (α) phase grains are embedded in the zinc-blende (β) phase matrix. It is shown that there are two types of the wurtzite GaN phase, namely, the epitaxial wurtzite and the tilted wurtzite. The tilted wurtzite grains are rotated some degrees ranging from approx. 5°C to approx. 35°C regarding the GaAs substrate. A simple model is presented to describe the occurrence of the mixed phases and the two types of the wurtzite phase.

Original languageEnglish
Pages (from-to)873-877
Number of pages5
JournalJournal of Electronic Materials
Volume28
Issue number7
Publication statusPublished - 1999 Jul 1
Externally publishedYes

Fingerprint

Vapor phase epitaxy
Organometallics
vapor phase epitaxy
wurtzite
Electron diffraction
Electron microscopes
Phase stability
Epitaxial layers
Substrates
electron diffraction
electron microscopes
occurrences
Zinc
Vapors
Microstructure
gallium arsenide
zinc
examination
vapor phases
microstructure

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy. / Bae, In T.; Seong, Tae Yeon; Park, Young J.; Kim, Eun Kyu.

In: Journal of Electronic Materials, Vol. 28, No. 7, 01.07.1999, p. 873-877.

Research output: Contribution to journalArticle

Bae, In T. ; Seong, Tae Yeon ; Park, Young J. ; Kim, Eun Kyu. / Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy. In: Journal of Electronic Materials. 1999 ; Vol. 28, No. 7. pp. 873-877.
@article{b04dfb6ebe2144628dc20f6e188b1ac4,
title = "Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy",
abstract = "Detailed transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed on organometallic vapor phase epitaxial GaN layers grown on (001) GaAs substrate to investigate microstructures and phase stability. TED and TEM results exhibit the occurrence of a mixed phase of GaN. The wurtzite (α) phase grains are embedded in the zinc-blende (β) phase matrix. It is shown that there are two types of the wurtzite GaN phase, namely, the epitaxial wurtzite and the tilted wurtzite. The tilted wurtzite grains are rotated some degrees ranging from approx. 5°C to approx. 35°C regarding the GaAs substrate. A simple model is presented to describe the occurrence of the mixed phases and the two types of the wurtzite phase.",
author = "Bae, {In T.} and Seong, {Tae Yeon} and Park, {Young J.} and Kim, {Eun Kyu}",
year = "1999",
month = "7",
day = "1",
language = "English",
volume = "28",
pages = "873--877",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "7",

}

TY - JOUR

T1 - Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy

AU - Bae, In T.

AU - Seong, Tae Yeon

AU - Park, Young J.

AU - Kim, Eun Kyu

PY - 1999/7/1

Y1 - 1999/7/1

N2 - Detailed transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed on organometallic vapor phase epitaxial GaN layers grown on (001) GaAs substrate to investigate microstructures and phase stability. TED and TEM results exhibit the occurrence of a mixed phase of GaN. The wurtzite (α) phase grains are embedded in the zinc-blende (β) phase matrix. It is shown that there are two types of the wurtzite GaN phase, namely, the epitaxial wurtzite and the tilted wurtzite. The tilted wurtzite grains are rotated some degrees ranging from approx. 5°C to approx. 35°C regarding the GaAs substrate. A simple model is presented to describe the occurrence of the mixed phases and the two types of the wurtzite phase.

AB - Detailed transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed on organometallic vapor phase epitaxial GaN layers grown on (001) GaAs substrate to investigate microstructures and phase stability. TED and TEM results exhibit the occurrence of a mixed phase of GaN. The wurtzite (α) phase grains are embedded in the zinc-blende (β) phase matrix. It is shown that there are two types of the wurtzite GaN phase, namely, the epitaxial wurtzite and the tilted wurtzite. The tilted wurtzite grains are rotated some degrees ranging from approx. 5°C to approx. 35°C regarding the GaAs substrate. A simple model is presented to describe the occurrence of the mixed phases and the two types of the wurtzite phase.

UR - http://www.scopus.com/inward/record.url?scp=0032643560&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032643560&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032643560

VL - 28

SP - 873

EP - 877

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 7

ER -