Structural study of GaN(As,P) layers grown on (0001) GaN by gas source molecular beam epitaxy

Tae Yeon Seong, In Tae Bae, Y. Zhao, C. W. Tu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed to investigate microstructural properties of gas source molecular beam epitaxial GaN(As,P) layers grown on (0001) GaN/sapphire at temperatures in the range 500 - 760°C. As for the GaNAs, we report the observation of ordering with a space group P3ml in the layer grown at 730°C. The layers grown at temperatures below 600°C are polycrystalline, whist the 730°C GaNAs layer has epitaxial relation to the GaN substrate. It is also shown that the GaNAs layers experience a structural change from a zinc-blende phase to a wurtzite phase, as the growth temperature increases. As for the GaNP, it is shown that the layers grown temperatures ≤ 600°C experience phase separation resulting in a mixture of GaN-rich and GaP-rich GaNP with zinc-blende structure. However, the layers grown at temperatures ≥ 730°C are found to be binary zinc-blende GaN(P) single crystalline materials. The layers grown at temperatures ≥ 730°C consist of two types of micro-domains, i.e., GaN(P) I and GaN(P) II; the former having twin relation to the latter.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Volume537
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA
Duration: 1998 Nov 301998 Dec 4

Other

OtherProceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys'
CityBoston, MA, USA
Period98/11/3098/12/4

Fingerprint

Gas source molecular beam epitaxy
Zinc
Temperature
Molecular beams
Aluminum Oxide
Epitaxial layers
Growth temperature
Sapphire
Electron diffraction
Phase separation
Electron microscopes
Gases
Crystalline materials
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Seong, T. Y., Bae, I. T., Zhao, Y., & Tu, C. W. (1999). Structural study of GaN(As,P) layers grown on (0001) GaN by gas source molecular beam epitaxy. In Materials Research Society Symposium - Proceedings (Vol. 537). Materials Research Society.

Structural study of GaN(As,P) layers grown on (0001) GaN by gas source molecular beam epitaxy. / Seong, Tae Yeon; Bae, In Tae; Zhao, Y.; Tu, C. W.

Materials Research Society Symposium - Proceedings. Vol. 537 Materials Research Society, 1999.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Seong, TY, Bae, IT, Zhao, Y & Tu, CW 1999, Structural study of GaN(As,P) layers grown on (0001) GaN by gas source molecular beam epitaxy. in Materials Research Society Symposium - Proceedings. vol. 537, Materials Research Society, Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys', Boston, MA, USA, 98/11/30.
Seong TY, Bae IT, Zhao Y, Tu CW. Structural study of GaN(As,P) layers grown on (0001) GaN by gas source molecular beam epitaxy. In Materials Research Society Symposium - Proceedings. Vol. 537. Materials Research Society. 1999
Seong, Tae Yeon ; Bae, In Tae ; Zhao, Y. ; Tu, C. W. / Structural study of GaN(As,P) layers grown on (0001) GaN by gas source molecular beam epitaxy. Materials Research Society Symposium - Proceedings. Vol. 537 Materials Research Society, 1999.
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AB - Transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed to investigate microstructural properties of gas source molecular beam epitaxial GaN(As,P) layers grown on (0001) GaN/sapphire at temperatures in the range 500 - 760°C. As for the GaNAs, we report the observation of ordering with a space group P3ml in the layer grown at 730°C. The layers grown at temperatures below 600°C are polycrystalline, whist the 730°C GaNAs layer has epitaxial relation to the GaN substrate. It is also shown that the GaNAs layers experience a structural change from a zinc-blende phase to a wurtzite phase, as the growth temperature increases. As for the GaNP, it is shown that the layers grown temperatures ≤ 600°C experience phase separation resulting in a mixture of GaN-rich and GaP-rich GaNP with zinc-blende structure. However, the layers grown at temperatures ≥ 730°C are found to be binary zinc-blende GaN(P) single crystalline materials. The layers grown at temperatures ≥ 730°C consist of two types of micro-domains, i.e., GaN(P) I and GaN(P) II; the former having twin relation to the latter.

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