Structural study of InP/IN0.61Ga0.39As/InP quantum well using TEM

Sahn Nahm, Kon Dae Oh, Hee Tae Lee, Kyoung Ik Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of growth interruption (GI) on the quality of interface between InGaAs quantum well (QW) and InP layer has been studied using transmission electron microscopy (TEM). Our results indicate that long time AsH3 purge during the first GI is detrimental to the formation of InGaAs QW.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages311-316
Number of pages6
Volume326
ISBN (Print)1558992251
Publication statusPublished - 1994 Jan 1
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: 1993 Nov 291993 Dec 2

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period93/11/2993/12/2

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Nahm, S., Oh, K. D., Lee, H. T., & Cho, K. I. (1994). Structural study of InP/IN0.61Ga0.39As/InP quantum well using TEM. In Materials Research Society Symposium Proceedings (Vol. 326, pp. 311-316). Publ by Materials Research Society.