Structural study of InP/IN0.61Ga0.39As/InP quantum well using TEM

Sahn Nahm, Kon Dae Oh, Hee Tae Lee, Kyoung Ik Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of growth interruption (GI) on the quality of interface between InGaAs quantum well (QW) and InP layer has been studied using transmission electron microscopy (TEM). Our results indicate that long time AsH3 purge during the first GI is detrimental to the formation of InGaAs QW.

Original languageEnglish
Title of host publicationGrowth, Processing, and Characterization of Semiconductor Heterostructures
PublisherPubl by Materials Research Society
Pages311-316
Number of pages6
ISBN (Print)1558992251
Publication statusPublished - 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: 1993 Nov 291993 Dec 2

Publication series

NameMaterials Research Society Symposium Proceedings
Volume326
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period93/11/2993/12/2

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Nahm, S., Oh, K. D., Lee, H. T., & Cho, K. I. (1994). Structural study of InP/IN0.61Ga0.39As/InP quantum well using TEM. In Growth, Processing, and Characterization of Semiconductor Heterostructures (pp. 311-316). (Materials Research Society Symposium Proceedings; Vol. 326). Publ by Materials Research Society.