Structural study of InP/IN0.61Ga0.39As/InP quantum well using TEM

Sahn Nahm; Kon Dae Oh; Hee Tae Lee; Kyoung Ik Cho

Structural study of InP/IN_0.61Ga_0.39As/InP quantum well using TEM

Sahn Nahm, Kon Dae Oh, Hee Tae Lee, Kyoung Ik Cho

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effect of growth interruption (GI) on the quality of interface between InGaAs quantum well (QW) and InP layer has been studied using transmission electron microscopy (TEM). Our results indicate that long time AsH3 purge during the first GI is detrimental to the formation of InGaAs QW.

Original language	English
Title of host publication	Growth, Processing, and Characterization of Semiconductor Heterostructures
Publisher	Publ by Materials Research Society
Pages	311-316
Number of pages	6
ISBN (Print)	1558992251
Publication status	Published - 1994
Externally published	Yes
Event	Proceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA Duration: 1993 Nov 29 → 1993 Dec 2

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	326
ISSN (Print)	0272-9172

Other

Other	Proceedings of the 1993 Fall Meeting of the Materials Research Society
City	Boston, MA, USA
Period	93/11/29 → 93/12/2

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Structural study of InP/IN_0.61Ga_0.39As/InP quantum well using TEM. / Nahm, Sahn; Oh, Kon Dae; Lee, Hee Tae et al.

Growth, Processing, and Characterization of Semiconductor Heterostructures. Publ by Materials Research Society, 1994. p. 311-316 (Materials Research Society Symposium Proceedings; Vol. 326).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nahm, S, Oh, KD, Lee, HT & Cho, KI 1994, Structural study of InP/IN_0.61Ga_0.39As/InP quantum well using TEM. in Growth, Processing, and Characterization of Semiconductor Heterostructures. Materials Research Society Symposium Proceedings, vol. 326, Publ by Materials Research Society, pp. 311-316, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 93/11/29.

@inproceedings{27a8a7542b7946f89eaf9fe933156df1,

title = "Structural study of InP/IN0.61Ga0.39As/InP quantum well using TEM",

abstract = "The effect of growth interruption (GI) on the quality of interface between InGaAs quantum well (QW) and InP layer has been studied using transmission electron microscopy (TEM). Our results indicate that long time AsH3 purge during the first GI is detrimental to the formation of InGaAs QW.",

author = "Sahn Nahm and Oh, {Kon Dae} and Lee, {Hee Tae} and Cho, {Kyoung Ik}",

year = "1994",

language = "English",

isbn = "1558992251",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "311--316",

booktitle = "Growth, Processing, and Characterization of Semiconductor Heterostructures",

note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",

}

TY - GEN

T1 - Structural study of InP/IN0.61Ga0.39As/InP quantum well using TEM

AU - Nahm, Sahn

AU - Oh, Kon Dae

AU - Lee, Hee Tae

AU - Cho, Kyoung Ik

PY - 1994

Y1 - 1994

N2 - The effect of growth interruption (GI) on the quality of interface between InGaAs quantum well (QW) and InP layer has been studied using transmission electron microscopy (TEM). Our results indicate that long time AsH3 purge during the first GI is detrimental to the formation of InGaAs QW.

AB - The effect of growth interruption (GI) on the quality of interface between InGaAs quantum well (QW) and InP layer has been studied using transmission electron microscopy (TEM). Our results indicate that long time AsH3 purge during the first GI is detrimental to the formation of InGaAs QW.

UR - http://www.scopus.com/inward/record.url?scp=0027988939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027988939&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027988939

SN - 1558992251

T3 - Materials Research Society Symposium Proceedings

SP - 311

EP - 316

BT - Growth, Processing, and Characterization of Semiconductor Heterostructures

PB - Publ by Materials Research Society

T2 - Proceedings of the 1993 Fall Meeting of the Materials Research Society

Y2 - 29 November 1993 through 2 December 1993

ER -